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Cautions Keep safety first your circuit designs! Renesas Technolo
Top Searches for this datasheetCautions Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. 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Edition Mar. 2001 Application frequency high voltage amplifier Outline TO-92MOD Emitter Collector Base 2SD1868, 2SD1869 Absolute Maximum Ratings 25°C) Item Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg 2SA1868 +150 2SA1869 +150 Unit Electrical Characteristics 25°C) Item Collector base breakdown voltage Symbol 2SD1868 V(BR)CBO 2SD1869 Collector emitter breakdown voltage 2SD1868 V(BR)CEO 2SD1869 Emitter base breakdown voltage Collector cutoff current V(BR)EBO hFE1* hFE2 Base emitter voltage Collector emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Grade hFE1 VCE(sat) Unit Test conditions 2SD1868 2SD1869 current transfer ratio 2SD1868 2SD1869 grouped follows. 2SD1868, 2SD1869 Maximum Collector Dissipation Curve Collector Power Dissipation Collector Current (mA) Typical Output Characteristics Collector Emitter Voltage Ambient Temperature (°C) Typical Transfer Characteristics Collector Current (mA) Base Emitter Voltage Current Transfer Ratio Pulse Test Current Transfer Ratio Collector Current Pulse Test 75°C Collector Current (mA) 2SD1868, 2SD1869 Saturation Voltage Collector Current Collector Emitter Saturation Voltage VCE(sat) Base Emitter Saturation Voltage VBE(sat) Pulse Test VBE(sat) Gain Bandwidth Product (MHz) Pulse Test Gain Bandwidth Product Collector Current -25°C 0.05 VCE(sat) -25° Collector Current (mA) Collector Current (mA) Collector Output Capacitance Collector Base Voltage Collector Output Capacitance (pF) Collector Base Voltage 2SD1868, 2SD1869 Package Dimensions January, 2001 Unit: 0.65 0.75 0.55Max 0.60 10.1 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 Conforms 0.35 2SD1868, 2SD1869 Cautions Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products. Hitachi, Ltd. Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 NorthAmerica Europe Asia Japan http://sicapac.hitachi-asia.com Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk further information write Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan. 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