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Amplifier Transistors
Silicon
COLLECTOR BASE EMITTER
2N5209 2N5210
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage mAdc, Collector Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, Emitter Cutoff Current (VEB Vdc, V(BR)CEO V(BR)CBO ICBO IEBO nAdc nAdc
Motorola Small-Signal Transistors, FETs Diodes Device Data Motorola, Inc. 1996
2N5209 2N5210
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain µAdc, Vdc) 2N5209 2N5210 2N5209 2N5210 2N5209 2N5210 VCE(sat) VBE(on) 0.85
mAdc, Vdc) mAdc, Vdc)(1) Collector Emitter Saturation Voltage mAdc, mAdc) Base Emitter Voltage mAdc, mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product µAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Noise Figure µAdc, Vdc, kHz) µAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%. 2N5209 2N5210 2N5209 2N5210 2N5209 2N5210
IDEAL TRANSISTOR
Figure Transistor Noise Model
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N5209 2N5210
NOISE CHARACTERISTICS
(VCE Vdc, 25°C) NOISE VOLTAGE
BANDWIDTH NOISE VOLTAGE (nV) NOISE VOLTAGE (nV) BANDWIDTH
FREQUENCY (Hz) 0.01 0.02 0.05 COLLECTOR CURRENT (mA)
Figure Effects Frequency
NOISE CURRENT (pA) NOISE FIGURE (dB)
Figure Effects Collector Current
BANDWIDTH
BANDWIDTH 15.7
FREQUENCY (Hz)
SOURCE RESISTANCE (OHMS)
Figure Noise Current NOISE DATA
TOTAL NOISE VOLTAGE (nV) SOURCE RESISTANCE (OHMS) BANDWIDTH NOISE FIGURE (dB)
Figure Wideband Noise Figure
BANDWIDTH SOURCE RESISTANCE (OHMS)
Figure Total Noise Voltage
Figure Noise Figure
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N5209 2N5210
CURRENT GAIN (NORMALIZED) 125°C 25°C 0.01 55°C
0.02
0.03
0.05
COLLECTOR CURRENT (mA)
Figure Current Gain
25°C VOLTAGE (VOLTS) RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/
25°C 125°C
VCE(sat) IC/IB 0.01 0.02 0.05 COLLECTOR CURRENT (mA)
55°C 25°C 0.01 0.02 0.05 COLLECTOR CURRENT (mA)
Figure "On" Voltages
CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure Temperature Coefficients
CAPACITANCE (pF) 25°C
COLLECTOR CURRENT (mA) 25°C
REVERSE VOLTAGE (VOLTS)
Figure Capacitance
Figure Current-Gain Bandwidth Product
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N5209 2N5210
PACKAGE DIMENSIONS
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. CONTOUR PACKAGE BEYOND DIMENSION UNCONTROLLED. DIMENSION APPLIES BETWEEN DIMENSION APPLY BETWEEN MINIMUM. LEAD DIMENSION UNCONTROLLED BEYOND DIMENSION MINIMUM. INCHES 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43
SEATING PLANE
SECTION
CASE 029-04 (TO-226AA) ISSUE
STYLE EMITTER BASE COLLECTOR
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N5209 2N5210
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
Motorola Small-Signal Transistors, FETs Diodes Device Data
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