Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
2SH31
Silicon Channel IGBT High Speed Power Switching
ADE-208-793(Z) 1st. Edition 1999 Features
High speed switching on-voltage
Outline
TO-3P
Gate Collector (Flange) Emitter
2SH31
Absolute Maximum Ratings 25°C)
Item Collector Emitter voltage Gate Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: Value 25°C Symbol VCES VGES ic(peak) Tstg
Note1
Ratings +150
Unit
Electrical Characteristics 25°C)
Item Zero gate voltage collector current Gate emitter leak current 4100 1600 75mA, 75A, 10V, 1MHz ±15V Symbol Unit Test Conditions 600V,
Gate emitter cutoff voltage VGE(off) Collector emitter saturation VCE(sat) voltage Input capacitance Switching time Cies
2SH31
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area 1000 0.03
Collector Current
Channel Dissipation
Case Temperature
(°C)
0.01 1000 Collector Emitter Voltage
Reverse Bias
Typical Output Characteristics
Pulse Test
Collector Current
Collector Emitter Voltage
Collector Current
Collector Emitter Voltage
2SH31
Collector Emitter Saturation Voltage Gate Emitter Voltage Pulse Test
Typical Transfer Characteristics Pulse Test
Collector Emitter Saturation Voltage CE(sat)
Collector Current
-25°C 75°C 25°C
Gate Emitter Voltage
Gate Emitter Voltage
Collector Emitter Saturation Voltage CE(sat)
Collecot Emitter Saturation Voltage Collector Current
Capacitance (pF)
Typical Capacitance Collecotor Emitter Voltage 100000 30000 10000 Cies 3000 1000 Coes Cres Collector Emitter Voltage
-25°C 25°C
75°C
Pulse Test Collector Current
2SH31
Dynamic Input Characteristics Switching Characteristics 1000
1000
d(off)
Collector Emitter Voltage
Switching Time (ns)
Gate Emitter Voltage
d(on)
300V, 25°C Collector Current
Gate Charge (nc)
Switching Characteristics 10000 d(off) 1000 d(on) 1000
Switching Characteristics d(off) Case Temperature (°C) d(on)
Switching Time (ns)
Gate Resistance
1000
Switching Time (ns)
3000
2SH31
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) 0.83 °C/W,
0.03
0.02
0.01
Pulse Width
Switching Time Test Circuit
Waveform
Monitor Monitor Monitor td(off) toff D.U.T. td(on)
2SH31
Package Dimensions
Unit:
16.0
14.9
20.1
18.0
5.45
5.45
Hitachi Code EIAJ JEDEC
TO-3P SC-65
2SH31
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write
Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223
Copyright Hitachi, Ltd., 1998. rights reserved. Printed Japan.

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