Complementary Silicon High-Power Transistors designed general-pur

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Complementary Silicon High-Power Transistors designed general-pur

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2N5883, 2N5884*, 2N5885, 2N5886*
Complementary Silicon High-Power Transistors
designed general-purpose power amplifier switching applications.
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Collector-Emitter Saturation Voltage Leakage Current
VCE(sat) Vdc, (max) ICEX mAdc (max) Rated Voltage Excellent Current Gain (min) High Current Gain Bandwidth Product (min)
2N5883 2N5885 2N5884 2N5886
AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
MARKING DIAGRAM
MAXIMUM RATINGS
Rating Symbol VCEO Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Current Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range 1.15 Watts W/°C Tstg +200
xxxxxxxxxx CCCCC AWLYYWW
CASE 1-07 TO-204AA (TO-3) CCCCC Specific Device Code Assembly Location Wafer Year Work Week Country Code
Preferred devices recommended choices future best overall value.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Unit
Thermal Resistance, Junction Case
0.875
°C/W
Indicates JEDEC registered data. Units conditions differ some parameters re-registration reflecting these changes been requested. above values most exceed present JEDEC registered data.
Semiconductor Components Industries, LLC, 2002
May, 2002 Rev.
Publication Order Number: 2N5883/D
POWER DISSIPATION (WATTS)
*Indicates JEDEC Registered Data. Pulse Test: Pulse Width Duty Cycle 2.0%. |hfe| ftest.
*ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
SWITCHING CHARACTERISTICS
DYNAMIC CHARACTERISTICS
CHARACTERISTICS
Fall Time
Storage Time
Rise Time
Collector Cutoff Current
Collector-Emitter Saturation Voltage (Note
Current Gain (Note
Small-Signal Current Gain Adc, Vdc, ftest kHz)
Output Capacitance (VCB Vdc, MHz)
Current-Gain Bandwidth Product (Note Adc, Vdc, ftest MHz)
Base-Emitter Voltage (Note Adc, Vdc)
Base-Emitter Saturation Voltage (Note Adc, 6.25 Adc)
Emitter Cutoff Current (VEB Vdc,
Collector Cutoff Current (VCB Vdc, (VCB Vdc,
Collector Cutoff Current (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc, 150°C) (VCE Vdc, VBE(off) Vdc, 150°C)
Collector-Emitter Sustaining Voltage (Note mAdc,
2N5883, 2N5884*, 2N5885, 2N5886*
(VCE Vdc, (VCE Vdc,
Characteristic
(VCC Vdc, Adc, Adc)
Figure Power Derating
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CASE TEMPERATURE (°C) Adc, Vdc) Adc, Vdc) Adc, Vdc) Adc, Adc) Adc, 6.25 Adc) 2N5883, 2N5884 2N5885, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5984, 2N5886 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX 1000 mAdc mAdc mAdc mAdc Unit
2N5883, 2N5884*, 2N5885, 2N5886*
SCOPE
TURN-ON TIME
+2.0
TIME
25°C IC/IB VBE(off) 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
DUTY CYCLE 2.0%
SCOPE
0.07 0.05 0.03 0.02
TURN-OFF TIME
+9.0
+7.0
DUTY CYCLE 2.0% CURVES FIGURES VARIED. INPUT LEVELS APPROXIMATELY SHOWN. NPN, REVERSE POLARITIES.
COLLECTOR CURRENT (AMPERES)
Figure Turn-On Time
Figure Switching Time Equivalent Test Circuits
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2N5883, 2N5884*, 2N5885, 2N5886*
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.05 0.02 0.01 SINGLE PULSE 0.05 P(pk) qJC(t) r(t) 0.875°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) qJC(t) DUTY CYCLE, t1/t2 TIME (ms) 1000 2000
0.05 0.02 0.01 0.02
Figure Thermal Response
200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5883, 2N5885 2N5884, 2N5886 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based TJ(pk) 200°C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(pk) 200°C. TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
COLLECTOR CURRENT (AMPERES)
Figure Active-Region Safe Operating Area
TIME
3000 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 25°C IC/IB 25°C 2000 CAPACITANCE (pF) 1000
COLLECTOR CURRENT (AMPERES)
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
REVERSE VOLTAGE (VOLTS)
Figure Turn-Off Time
Figure Capacitance
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2N5883, 2N5884*, 2N5885, 2N5886*
DEVICES 2N5883 2N5884
1000 CURRENT GAIN COLLECTOR CURRENT (AMPERES) 1000 CURRENT GAIN COLLECTOR CURRENT (AMPERES) 25°C
DEVICES 2N5885 2N5886
150°C
150°C 25°C -55°C
-55°C
Figure Current Gain
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C 0.01
COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C 0.01
0.02
0.05 BASE CURRENT (AMPERES)
0.02
0.05 COLLECTOR CURRENT (AMPERES)
Figure Collector Saturation Region
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) VCE(sat) IC/IB VBE(sat) IC/IB VOLTAGE (VOLTS)
VBE(sat) IC/IB VCE(sat) IC/IB 25°C
COLLECTOR CURRENT (AMPERES)
COLLECTOR CURRENT (AMPERES)
Figure "On" Voltages
Figure "On" Voltages
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2N5883, 2N5884*, 2N5885, 2N5886*
PACKAGE DIMENSIONS
CASE 1-07 TO-204AA (TO-3) ISSUE
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. RULES NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005)
INCHES 1.550 -1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 0.215 0.440 0.480 0.665 -0.830 0.151 0.165 1.187 0.131 0.188
MILLIMETERS 39.37 -26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 5.46 11.18 12.19 16.89 -21.08 3.84 4.19 30.15 3.33 4.77
0.13 (0.005)
STYLE BASE EMITTER CASE: COLLECTOR
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2N5883, 2N5884*, 2N5885, 2N5886*
Notes
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2N5883, 2N5884*, 2N5885, 2N5886*
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2N5883/D

Complementary Silicon High-Power Transistors designed general-pur

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