Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
4AM17
Silicon Channel High Speed Power Switching
ADE-208-729 1st. Edition January 1999 Features
on-resistance Channel RDS(on) 0.17 10V, Channel RDS(on) -10V, gate drive devices. High density mounting
Outline
SP-12
1112
Gate Drain Source
4AM17
Absolute Maximum Ratings 25°C)
Item Symbol Ratings Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 10µs, duty cycle devices operation VDSS VGSS D(pulse) (Tc=25°C) Tstg
Note2 Note2 Note1
Unit
+150
4AM17
Electrical Characteristics 25°C)
Channel Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test Symbol V(BR)DSS V(BR)GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss d(on) d(off) 0.13 0.19 0.15 0.17 0.24 Unit =8A, =8A, diF/ =50A/µs Test Conditions 10mA, ±100µA, ±16V, 50V, 10V, Note3 Note3 Note3 1MHz 10V, 1MHz =10V,
4AM17
Channel Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test Symbol V(BR)DSS V(BR)GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss d(on) d(off) -1.0 0.15 -1.2 -250 -2.5 0.27 Unit =-8A, =-8A, diF/ =50A/µs Test Conditions -10mA, ±100µA, ±16V, -50V, -10V, -1mA -4A, -10V Note3 -4A, Note3 -4A, -10V Note3 -10V 1MHz 1MHz -10V,
4AM17
Main Characteristics
Maximum Channel Dissipation Curve Condition Channel dissipation each idetical Device Operation Device Operation Device Operation Device Operation
Maximum Channel Dissipation Curve
Condition Channel dissipation each idetical Device Operation Device Operation Device Operation Device Operation
Collector Power Dissipation
Collector Power Dissipation
Ambient Temperature (°C) Maximum Safe Operation Area (N-channel)
Case Temperature (°C) Maximum Safe Operation Area (P-channel)
Drain Current
0.05
Drain Current
Operation this area limited DS(on)
-0.5 -0.2 -0.1
Operation this area limited DS(on)
Drain Source Voltage
-0.05 -0.1 -0.3 -100 Drain Source Voltage
4AM17
Package Dimensions
Unit:
31.0
10.5
10.0
0.85
2.54
0.55 -0.06
+0.1
Hitachi Code JEDEC EIAJ
SP-12
4AM17
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such fail-safes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write
Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, 94005-1897 Tel: (800) 285-1601 Fax: (303) 297-0447
Copyright Hitachi, Ltd., 1998. rights reserved. Printed Japan.

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