Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
4AM12
Silicon N-Channel/P-Channel Power Array
ADE-208-1210 1st. Edition Mar. 2001 Application
High speed power switching
Features
on-resistance N-channel: RDS(on) 0.075 P-channel: RDS(on) 0.12 Capable gate drive drive current High speed switching High density mounting Suitable H-bridged motor driver
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Outline
SP-10
Source Gate Drain
Absolute Maximum Ratings 25°C) Unit)
Rating Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: duty cycle Devices operation Symbol VDSS VGSS D(pulse)* 25°C)* Pch* Tstg
Unit
+150
4AM12
Electrical Characteristics 25°C) Unit)
channel Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Symbol V(BR)DSS V(BR)GSS |yfs| Ciss Coss Crss d(on) d(off) 0.06 0.08 1.05 channel -1.0 0.09 0.12 Unit Test conditions ±100
Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note: VGS(off) RDS(on)
-250 -2.0 0.12 0.18
0.075 0.11
1400
-1.05
dIF/dt A/µs
Pulse Test Polarity test conditions channel device reversed.
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Maximum Channel Dissipation Curve Channel Dissipation Channel Dissipation Condition Channel Dissipation each identical Device Operation Device Operation Device Operation Device Operation Maximum Channel Dissipation Curve Condition Channel Dissipation each identical Device Operation Device Operation Device Operation Device Operation
Ambient Temperature (°C)
Case Temperature (°C)
Maximum Safe Operation Area (P-Channel)
Typical Output Characteristics Pulse Test
Drain Current -1.0 -0.5 -0.2 -0.1
Drain Current
25°C
Drain Source Voltage
-0.05 -0.1 -0.3 -1.0 -100 Drain Source Voltage
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Typical Transfer Characteristics 25°C Pulse Test -25°C Drain Source Saturation Voltage (on) Drain Source Saturation Voltage Gate Source Voltage -2.0 Pulse Test -1.6 -1.2 -0.8 -0.4
Drain Current
75°C
Gate Source Voltage
Gate Source Voltage
Static Drain Source State Resistance (on)
Static Drain Source State Resistance (on)
Static Drain Source State Resistance Drain Current Pulse Test 0.05
Static Drain Source State Resistance Temperature 0.25 Pulse Test
0.20
0.15
0.10 0.05
0.02 0.01 0.005
-100 Drain Current
Case Temperature (°C)
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Forward Transfer Admittance Drain Current Forward Transfer Admittance -25°C 25°C 75°C Reverse Recovery Time (ns) Pulse Test Body Drain Diode Reverse Recovery Time
-0.2
di/dt A/µs, 25°C Pulse Test -0.5 -1.0 Reverse Drain Current
-0.5 -1.0 Drain Current
-0.2
Typical Capacitance Drain Source Voltage 10,000 Drain Source Voltage Capacitance (pF) Ciss 1,000 Coss
Dynamic Input Characteristics Gate Source Voltage
Crss
Drain Source Voltage
-100 Gate Charge (nc)
4AM12
Switching Characteristics (off) Reverse Drain Current Switching Time (ns) -0.2 -30V duty Pulse Test Reverse Drain Current Source Drain Voltage
(on)
-0.5 -1.0 Drain Current
-0.4 -1.2 -1.6 -0.8 -2.0 Source Drain Voltage
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Maximum Safe Operation Area (N-Channel)
Typical Output Characteristics Pulse Test
Drain Current
Drain Current
25°C
0.05
Drain Source Voltage
Drain Source Voltage
Typical Transfer Characteristics Drain Current Pulse Test Drain Source Saturation Voltage (on)
Drain Source Saturation Voltage Gate Source Voltage Pulse Test
75°C -25°C 25°C
Gate Source Voltage
Gate Source Voltage
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Static Drain Source State Resistance Drain Current Static Drain Source State Resistance (on) Static Drain Source State Resistance (on) 0.05 Pulse Test 0.20 Static Drain Source State Resistance Temperature Pulse Test
0.16 0.12
0.08
0.02 0.01 0.005 Drain Current
0.04
Case Temperature (°C)
Forward Transfer Admittance Drain Current Forward Transfer Admittance Reverse Recovery Time (ns) 75°C Pulse Test -25°C 25°C 1000
Body Drain Diode Reverse Recovery Time di/dt A/µs, 25°C Pulse Test
Drain Current
Reverse Drain Current
4AM12
Typical Capacitance Drain Source Voltage 10000 Drain Source Voltage 3000 Capacitance (pF) 1000 Drain Source Voltage Gate Charge (nc) Ciss Coss Crss 1MHz Dynamic Input Characteristics Gate Source Voltage
Switching Characteristics (off) Reverse Drain Current
Reverse Drain Current Source Drain Voltage
Switching Time (ns)
Pulse Test
2µs, duty
(on)
Drain Current
Source Drain Voltage
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Package Dimensions January, 2001
Unit:
26.5 10.0
1.82
2.54
0.55
10.5
0.55 -0.06
+0.1
Hitachi Code JEDEC EIAJ Mass (reference value)
SP-10
4AM12
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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