Silicon Power Darlington Transistor SEMICONDUCTOR TECHNICAL DATA

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Silicon Power Darlington Transistor SEMICONDUCTOR TECHNICAL DATA

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Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Silicon Power Darlington Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Collector-Emitter Sustaining Voltage VCEO(sus) (Min) Watts Capability Volts Automotive Functional Tests
MJ10012 MJH10012 high-voltage, high-current Darlington transistors designed automotive ignition, switching regulator motor control applications.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature Soldering Purposes: from Case Seconds Thermal Resistance, Junction Case Operating Storage Junction Temperature Range Total Power Dissipation 25_C 100_C Derate above 25_C Base Current Collector Current Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage (RBE Collector-Emitter Voltage Characteristic Rating Symbol Symbol Tstg VCBO VCEO VEBO VCER
10%.
MJ10012
BASE
MJH10012
47.5 1.05
0.95
COLLECTOR
EMITTER
Watts Watts W/_C
_C/W
Unit
Unit
MJ10012 MJH10012
AMPERE POWER TRANSISTORS DARLINGTON SILICON VOLTS WATTS
CASE 340D-01 TO-218 TYPE MJH10012
Order this document MJ10012/D
CASE 1-07 TO-204AA (TO-3) MJ10012
MJ10012 MJH10012
Pulse Test: Pulse Width Duty Cycle FUNCTIONAL TESTS SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS CHARACTERISTICS CHARACTERISTICS
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
Pulsed Energy Test (See Figure
Second Breakdown Collector Current with Base-Forward Biased
Fall Time
Storage Time
Output Capacitance (VCB Vdc, ftest kHz)
Diode Forward Voltage Adc)
Base Emitter Voltage Adc, Vdc)
Base Emitter Saturation Voltage Adc, Adc) Adc, Adc)
Collector-Emitter Saturation Voltage Adc, Adc) Adc, Adc) Adc, Adc)
Current Gain Adc, Vdc) Adc, Vdc) Adc, Vdc)
Emitter Cutoff Current (VEB Vdc,
Collector Cutoff Current (Rated VCBO,
Collector Cutoff Current (Rated VCER, Ohms)
Collector-Emitter Sustaining Voltage (Figure mAdc, Ohms, Vclamp Rated VCER)
Collector-Emitter Sustaining Voltage (Figure mAdc, Vclamp Rated VCEO)
Adjust such that reaches Vclamp
Figure Sustaining Voltage Test Circuit
2N3713
VCEO
Characteristic
(VCC Vdc, Adc, Adc) Figure
1N4933
VCER
VCEO(sus) VCER(sus)
Vclamp
Vclamp
VCEO(sus)
VCER(sus)
VCE(sat)
VBE(sat)
VBE(on)
Symbol
Motorola Bipolar Power Transistor Device Data
IC2L/2 ICBO IEBO ICER IS/B
Figure Switching Times Test Circuit
1N3947
Figure
ADJUST UNTIL T.U.T.
2000
mAdc mAdc mAdc Unit
MJ10012 MJH10012
2000 1000 hFE, CURRENT GAIN 30°C COLLECTOR CURRENT (AMP) 25°C 150°C COLLECTOR-EMITTER VOLTAGE (VOLTS) 25°C
0.002 0.005 0.01 0.02 0.05 BASE CURRENT (AMP)
Figure Current Gain
Figure Collector Saturation Region
VCE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
IC/IB 150°C 25°C 30°C VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE(sat) IC/IB VBE(on)
30°C 25°C 25°C 150°C
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure Collector-Emitter Saturation Voltage
Figure Base-Emitter Voltage
COLLECTOR CURRENT
TIME
75°C 150°C
ICES
25°C IC/IB
25°C FORWARD
COLLECTOR CURRENT (AMP)
10-1 REVERSE
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure Turn-Off Switching Time
Figure Collector Cutoff Region
Motorola Bipolar Power Transistor Device Data
MJ10012 MJH10012
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 P(pk) RJC(t) r(t) °C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) RJC(t) DUTY CYCLE, t1/t2 TIME (ms) 1,000 2,000
Figure Thermal Response
COLLECTOR CURRENT (AMP) MJ10012 MJH10012
25°C BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01 0.005
Figure Forward Bias Safe Operating Area
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation, i.e., transistor must subjected greater dissipation than curves indicate. data Figure based 25_C, J(pk) variable depending power level. Second breakdown pulse limits valid duty cycles must derated when 25_C. Second breakdown limitations derate same thermal limitations. Allowable current voltages shown Figure found case temperature using appropriate curve Figure J(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
POWER DERATING FACTOR SECOND BREAKDOWN DERATING
STANCORE C2688
THERMAL DERATING
2N5881
1N4933 T.U.T.
MJH10012 MJ10012 selected such that reaches before switch-off. NOTE: "Usage Test," Figure specifies energy handling capabilities automotive ignition circuit.
CASE TEMPERATURE (°C)
Figure Power Derating
Figure Usage Test Circuit
Motorola Bipolar Power Transistor Device Data
MJ10012 MJH10012
PACKAGE DIMENSIONS
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. RULES NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005)
0.13 (0.005)
INCHES 1.550 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 0.215 0.440 0.480 0.665 0.830 0.151 0.165 1.187 0.131 0.188
MILLIMETERS 39.37 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 5.46 11.18 12.19 16.89 21.08 3.84 4.19 30.15 3.33 4.77
STYLE BASE EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 INCHES 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078
STYLE BASE COLLECTOR EMITTER COLLECTOR
CASE 340D-01 TO-218 TYPE ISSUE
Motorola Bipolar Power Transistor Device Data
MJ10012 MJH10012
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters vary different applications. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer.
reach EUROPE: Motorola Literature Distribution; P.O. 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
Motorola Bipolar Power Transistor Device Data
*MJ10012/D*
MJ10012/D

Silicon Power Darlington Transistor SEMICONDUCTOR TECHNICAL DATA

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