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Cautions Keep safety first your circuit designs! Renesas Technolo
Top Searches for this datasheetCautions Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein. HSB276AS Silicon Schottky Barrier Diode Balanced Mixer ADE-208-838(Z) Rev. Feb. 2000 Features High forward current, capacitance. HSB276AS which interconnected series configuration designed balanced mixer use. CMPAK package suitable high density surface mounting high speed assembly. Ordering Information Type HSB276AS Laser Mark Package Code CMPAK Arrangement (Top View) Cathode Anode Cathode Anode HSB276AS Absolute Maximum Ratings 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Note device Symbol VRRM Value +125 Unit Tstg Electrical Characteristics 25°C) Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability Note Note Symbol 0.90 0.10 Unit Test Condition 0.5V 0.5V 0.5V, 0.5V, 200pF Both forward reverse direction pulse. Failure criterion 100µA =0.5 device Rev.0, Feb. 2000, page HSB276AS Main Characteristic Reverse current Forward current 75°C 75°C 25°C 25°C Forward voltage Fig.1 Forward current Forward voltage Reverse voltage Fig.2 Reverse current Reverse voltage f=1MHz (pF) Capacitance Reverse voltage Fig.3 Capacitance Reverse voltage Rev.0, Feb. 2000, page HSB276AS Package Dimensions Unit: 0.425 0.05 0.16 0.06 1.25 (0.65) (0.65) 0.425 0.05 0.05 Hitachi Code JEDEC EIAJ Mass CMPAK Conforms 0.006 Rev.0, Feb. 2000, page HSB276AS Disclaimer Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 NorthAmerica Europe Asia Japan http://sicapac.hitachi-asia.com Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 further information write Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Copyright Hitachi, Ltd., 2001. rights reserved. Printed Japan. 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