P-CHANNEL 250V DPAK/IPAK MESH OVERLAYMOSFET TYPE STD3PS25 STD3PS2

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P-CHANNEL 250V DPAK/IPAK MESH OVERLAYMOSFET TYPE STD3PS25 STD3PS2

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STD3PS25 STD3PS25-1
P-CHANNEL 250V DPAK/IPAK MESH OVERLAYMOSFET
TYPE STD3PS25 STD3PS25-1
VDSS
RDS(on)
TYPICAL RDS(on) 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION STANDARD OUTLINE EASY AUTOMATED SURFACE MOUNT ASSEMBLY GATE-SOURCE ZENER DIODE
DPAK
IPAK
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performance. patented STrip layout coupled with Company's proprietary edge termination structure, makes suitable coverters lighting applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS CONSUMER LIGHTING
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 0.36 Unit W/°C
June 2003
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THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 2.77 °C/W °C/W
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, Min. Typ. Max. Unit
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, Min. Typ. Max. Unit
DYNAMIC
Symbol Ciss Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Input Resistance MHz,Gate Bias=0 Test Signal Level=20 Open Drain Test Conditions MHz, Min. Typ. Max. Unit
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ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 125V, 1.5A (Resistive, Figure 200V, 1.5A, Min. Typ. Max. Unit
SWITCHING
Symbol td(off) Parameter Turn-off Delay Time Fall Time Test Conditions 200V, 1.5A, 4.7, (see test circuit, Figure Min. Typ. 29.5 Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Curren 0.60A, di/dt 100A/µs, 40V, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± (Open Drain) Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
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Safe Operating Area p-ch Thermal Impedance Complementary pair
Output Characteristics p-ch
Transfer Characteristics p-ch
Transconductance p-ch
Static Drain-source Resistance p-ch
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STD3PS25 STD3PS25-1
Gate Charge Gate-source Voltage p-ch Capacitance Variations p-ch
Norm. Gate Thereshold Voltage Temp p-ch
Normalized BVDSS Temperature p-ch
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STD3PS25 STD3PS25-1
Fig. Switching Times Test Circuit Resistive Load Fig. Gate Charge test Circuit
Fig. Test Circuit Diode Recovery Behaviour
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TO-252 (DPAK) MECHANICAL DATA
MIN. 0.60 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 1.00 0.024 TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
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STD3PS25 STD3PS25-1
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
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STD3PS25 STD3PS25-1
DPAK FOOTPRINT
TUBE SHIPMENT suffix)*
dimensions millimeters
dimensions millimeters
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. 12.8 20.2 16.4 22.4 18.4 13.2 MIN. MAX. 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM.
BASE 2500
MIN. 10.4 1.65 2.55
15.7 16.3
inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618
0.641
MAX. 10.6 12.1 1.85 2.75
sales type
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STD3PS25 STD3PS25-1
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2003 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com
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P-CHANNEL 250V DPAK/IPAK MESH OVERLAYMOSFET TYPE STD3PS25 STD3PS2

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