N-CHANNEL 600V 0.26 TO-220/TO-220FP/TO-247 FDmeshPOWER MOSFET (with FA
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STP20NM60FD STF20NM60D STW20NM60FD
N-CHANNEL 600V 0.26 TO-220/TO-220FP/TO-247 FDmeshPOWER MOSFET (with FAST DIODE)
TYPE STP20NM60FD STF20NM60D STW20NM60FD
VDSS
RDS(on) 0.29 0.29 0.29
TYPICAL RDS(on) 0.26 HIGH dv/dt AVALANCHE CAPABILITIES 100% AVALANCHE TESTED INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE TIGHT PROCESS CONTROL HIGH MANUFACTURING YIELDS
TO-220
TO-220FP
TO-247
DESCRIPTION FDmeshassociates advantages reduced on-resistance fast switching with intrinsic fast-recovery body diode. therefore strongly recommended bridge topologies, particular phase-shift converters.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS PHASE-SHIFT FULL BRIDGE CONVERTERS SMPS WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE STP20NM60FD STF20NM60D STW20NM60FD MARKING P20NM60FD F20NM60D W20NM60FD PACKAGE TO-220 TO-220FP TO-247 PACKAGING TUBE TUBE TUBE
June 2003
1/11
STP20NM60FD STF20NM60D STW20NM60FD
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt VISO Tstg Parameter
STP20NM60FD
Value
STF20NM60D STW20NM60FD
Unit 12.6 1.42 W/°C V/ns
Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 12.6 1.20
12.6 0.36 2500
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS, JMAX. Limited only maximum temperature allowed
THERMAL DATA
TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 0.65 62.5 TO-220FP TO-247 0.585 °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
2/11
STP20NM60FD STF20NM60D STW20NM60FD
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, ±30V VGS, 250µA 10V, 0.26 Min. ±100 0.29 Typ. Max. Unit
DYNAMIC
Symbol Ciss Coss Crss Coss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 1310 Max. Unit
480V Gate Bias Test Signal Level 20mV Open Drain Test Conditions 300V, (Resistive Load see, Figure 480V, 20A, Min.
SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Typ. Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 20A, 4.7, (Inductive Load see, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Coss defined constant equivalent capacitance giving same charging time Coss when increases from
3/11
STP20NM60FD STF20NM60D STW20NM60FD
Safe Operating Area TO-220 Thermal Impedance TO-220
Safe Operating Area TO-220FP
Thermal Impedance TO-220FP
Safe Operating Area TO-247
Thermal Impedance TO-247
4/11
STP20NM60FD STF20NM60D STW20NM60FD
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
5/11
STP20NM60FD STF20NM60D STW20NM60FD
Normalized Gate Threshold Voltage Temp. Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
6/11
STP20NM60FD STF20NM60D STW20NM60FD
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
7/11
STP20NM60FD STF20NM60D STW20NM60FD
TO-220 MECHANICAL DATA
MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM.
8/11
STP20NM60FD STF20NM60D STW20NM60FD
TO-220FP MECHANICAL DATA
MIN. 0.45 0.75 1.15 1.15 4.95 28.6 15.9 30.6 10.6 16.4 1.126 .0385 0.114 0.626 0.354 0.118 MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM.
9/11
STP20NM60FD STF20NM60D STW20NM60FD
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM.
10/11
STP20NM60FD STF20NM60D STW20NM60FD
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