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Cautions
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2SK2729
Silicon Channel High Speed Power Switching
ADE-208-455A 2nd. Edition Mar. 2001 Features
on-resistance High speed switching drive current Avalanche ratings
Outline
TO-3P
Gate Drain (Flange) Source
2SK2729
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 10µs, duty cycle Value 25°C Value 25°C, Symbol VDSS VGSS D(pulse)*
Ratings +150
Unit
EAR*
Pch* Tstg
2SK2729
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS 0.24 3300 0.29 Unit 20A, 20A, diF/ 100A/µs Test Conditions 10mA, ±100µA, ±25V, 1mA, 10V*1 10A, 10V*1 10A, 10V*1 1MHz 400V 10V,
Gate source cutoff voltage VGS(off) Static drain source state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss
Reverse transfer capacitance Crss Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note: Pulse test d(on) d(off)
2SK2729
Main Characteristics
Power Temperature Derating Maximum Safe Operation Area
1000
Channel Dissipation
Drain Current
(°C)
Case Temperature
Operation this area limited DS(on) 1000 Drain Source Voltage
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Source Voltage
Drain Current
Drain Current
75°C
-25°C
25°C Gate Source Voltage
2SK2729
Drain Source Saturation Voltage Gate Source Voltage Drain Source Saturation Voltage DS(on) Pulse Test Drain Source State Resistance DS(on) Static Drain Source State Resistance Drain Current Pulse Test
Drain Current
Gate Source Voltage
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance
Static Drain Source State Resistance Temperature Pulse Test
Forward Transfer Admittance Drain Current Pulse Test Drain Current
Case Temperature (°C)
2SK2729
Body Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time (ns)
10000 5000
Typical Capacitance Drain Source Voltage Ciss
Capacitance (pF)
2000 1000
Coss
Reverse Drain Current
Crss
Drain Source Voltage
Dynamic Input Characteristics
1000 Switching Time (ns)
Switching Characteristics duty d(off)
Drain Source Voltage
Gate Source Voltage
d(on)
Gate Charge (nc)
Drain Current
2SK2729
Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test Repetive Avalanche Energy (mJ) duty Maximun Avalanche Energy Channel Temperature Derating
Source Drain Voltage
Channel Temperature (°C)
Normalized Transient Thermal Impedance Pulse Width Normalized Transient Thermal Impedance 25°C
0.05
c(t) 0.83 °C/W,
0.03
0.02
0.01
Pulse Width
2SK2729
Avalanche Test Circuit Avalanche Waveform VDSS VDSS
Monitor
Monitor
(BR)DSS
Switching Time Test Circuit Monitor D.U.T. Vout Monitor
Switching Time Waveform td(on) td(off)
Vout
2SK2729
Package Dimensions January, 2001
15.6
Unit:
14.9
19.9
18.0
5.45
5.45
Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P Conforms
2SK2729
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
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further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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