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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

Renesas Technology Corp. Customer Support Dept. April 1, 2003

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
· Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal.
Ordering Information
Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35
Pin Arrangement
1 2nd band Cathode band
1. Cathode 2. Anode
1SS106
Absolute Maximum Ratings
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 -55 to +125 Unit V mA °C °C
Electrical Characteristics
Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability
Symbol IF IR C -
Min 4.5 - - 70 100
Rev.1, Oct. 1998, page 2 of 2
1SS106
Main Characteristic
Forward current I F (A)
Reverse current I R (A)
Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage
2 4 8 6 Reverse voltage V R (V)
Fig.2 Reverse current Vs. Reverse voltage
Capacitance C (pF)
0 1.0 Reverse voltage V R (V) 10 0 0.5 1.0 1.5 2.0 2.5 3.0 Input voltage Vin (Vrms) Fig.4 Rectifier efficiency Vs. Input voltage Vin
Fig.3 Capacitance Vs. Reverse voltage
Rev.1, Oct. 1998, page 3 of 3
1SS106
Package Dimensions
26.0 Min
4.2 Max
26.0 Min
2 2nd band (White) Cathode band (White) Hitachi Code JEDECCode EIAJCode Weight(g) 1. Cathode 2. Anode DO-35 DO-35 SC-48 0.13
Rev.1, Oct. 1998, page 4 of 4
1SS106
Disclaimer
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://semiconductor.hitachi.com / http://www.hitachi-eu.com / hel / ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp / Sicd / indx.htm
For further information write to:
Colophon 4.0
Rev.1, Oct. 1998, page 5 of 5