Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
HM62V8100I Series
Wide Temperature Range Version SRAM (1024-kword 8-bit)
ADE-203-1278B Rev. Mar. 2002
Description
Hitachi HM62V8100I Series 8-Mbit static organized 1,048,576-word 8-bit. HM62V8100I Series realized higher density, higher performance power consumption employing Hi-CMOS process technology. offers power standby power dissipation; therefore, suitable battery backup systems. packaged bumps chip size package with 0.75 bump pitch standard 44-pin TSOP high density surface mounting.
Features
Single supply: Fast access time: (Max) Power dissipation: Active: mW/MHz (Typ) Standby: (Typ) Completely static memory. clock timing strobe required Equal access cycle times Common data input output. Three state output Battery backup operation. chip selection battery backup Temperature range: +85°C
HM62V8100I Series
Ordering Information
Type HM62V8100LTTI-5 HM62V8100LTTI-5SL HM62V8100LBPI-5 HM62V8100LBPI-5SL Access time 48-bumps with 0.75 bump pitch (TBP-48A) Package 400-mil 44pin plastic TSOP (normal-bend type) (TTP-44DE)
HM62V8100I Series
Arrangement
44-pin TSOP I/O0 I/O1 I/O2 I/O3 (Top view) I/O7 I/O6 I/O5 I/O4
Description (TSOP)
name I/O0 I/O7 Function Address input Data input/output Chip select Chip select Write enable Output enable Power supply Ground connection
HM62V8100I Series
48-bumps
I/O0
I/O4
I/O1
I/O5
I/O2
I/O6
I/O3
I/O7
(Top view)
Description (CSP)
name I/O0 I/O7 Function Address input Data input/output Chip select Chip select Write enable Output enable Power supply Ground connection
HM62V8100I Series
Block Diagram (TSOP)
decoder
Memory matrix 2,048 4,096
I/O0 Input data control I/O7
Column Column decoder
A17A18 A15A8
Control logic
HM62V8100I Series
Block Diagram (CSP)
decoder
Memory matrix 2,048 4,096
I/O0 Input data control I/O7
Column Column decoder
A5A0A19
Control logic
HM62V8100I Series
Operation Table
I/O0 I/O7 High-Z High-Z Dout High-Z Operation Standby Standby Read Write Output disable
Note: VIL,
Absolute Maximum Ratings
Parameter Power supply voltage relative Terminal voltage relative Power dissipation Storage temperature range Storage temperature range under bias Symbol Tstg Tbias Value -0.5 -0.5* 0.3* +125
Unit
Notes: min: -3.0 pulse half-width Maximum voltage +4.6
Operating Conditions
Parameter Supply voltage Symbol Input high voltage Input voltage Ambient temperature range Note: -0.3 Unit Note
min: -3.0 pulse half-width
HM62V8100I Series
Characteri stics
Parameter Input leakage current Output leakage current Symbol |ILI| |ILO Typ* Unit Test conditions VIL, VI/O VIL, VIH, Others VIH/VIL, Min. cycle, duty 100%, VIL, VIH, Others VIH/VIL Cycle time duty 100%,
Operating current Average operating current
Standby current Standby current
SB1*
SB1*3 Output high voltage Output voltage Note:
Typical values +25°C guaranteed. This characteristic guaranteed only version. This characteristic guaranteed only L-SL version.
Capacitance +25°C, MHz)
Parameter Input capacitance Input/output capacitance Note: Symbol CI/O Unit Test conditions VI/O Note
This parameter sampled 100% tested.
HM62V8100I Series
Characteristics +85°C, unless otherwise noted.)
Test Conditions Input pulse levels: Input rise fall time: Input output timing reference levels: Output load: figures (Including scope jig)
V
Dout 3070 30pF 3150
HM62V8100I Series
Read Cycle
HM62V8100I Parameter Read cycle time Address access time Chip select access time Symbol ACS1 ACS2 Output enable output valid Output hold from address change Chip select output low-Z CLZ1 CLZ2 Output enable output low-Z Chip deselect output high-Z CHZ1 CHZ2 Output disable output high-Z Unit Notes
HM62V8100I Series
Write Cycle
HM62V8100I Parameter Write cycle time Address valid write Chip selection write Write pulse width Address setup time Write recovery time Data write time overlap Data hold from write time Output active from write Output disable output High-Z Write output high-Z Symbol Unit Notes
Notes: CHZ, tOHZ defined time which outputs achieve open circuit conditions referred output voltage levels. This parameter sampled 100% tested. given temperature voltage condition, less than both given device from device device. write occures during overlap CS1, high CS2, write begins latest transition among going low, going high, going low. write ends earliest transition among going high, going low, going high. measured from beginning write write. measured from later going going high write. measured from address valid beginning write. measured from earliest going high going write cycle.
HM62V8100I Series
Timing Waveform
Read Cycle
Address tACS1 tCLZ1*2, tCHZ1 Valid address
tACS2 tCLZ2*2, tCHZ2*1, tOHZ*1,
tOLZ*2, Dout High impedance Valid data
HM62V8100I Series
Write Cycle Clock)
Address Valid address tWR*7
tCW*5 tCW*5
tWP*4
tAS*6
tWHZ*1,
Valid data tOW*2 High impedance
Dout
HM62V8100I Series
Write Cycle Clock, VIH)
Address Valid address tAS*6 tCW*5 tWP*4 Valid data tCW*5 tWR*7
High impedance Dout
HM62V8100I Series
Data Retention Characteristics +85°C)
Parameter data retention Symbol Typ* Unit Test conditions*3
Data retention current
CCDR*1
CCDR*2 Chip deselect data retention time Operation recovery time
retention waveform
Notes: This characteristic guaranteed only version. This characteristic guaranteed only L-SL version. controls address buffer, buffer, buffer, buffer buffer. controls data retention mode, levels (address, CS1, I/O) high impedance state. controls data retention mode, must other input levels (address, I/O) high impedance state. Typical values +25°C guaranteed. read cycle time.
HM62V8100I Series
Data Retention Timing Waveform (CS1 Controlled)
Data retention mode
Data Retention Timing Waveform (CS2 Controlled)
Data retention mode
HM62V8100I Series
Package Dimensions
HM62V8100LTTI Series (TTP-44DE)
July, 2001
18.41 18.81
Unit:
*0.27 0.07 0.25 0.05
0.80 0.13
0.80
10.16
1.005 *0.145 0.05 0.125 0.04
11.76 0.20 0.50 0.10 0.68 0.13 0.05
1.20
0.10
*Dimension including plating thickness Base material dimension
Hitachi Code JEDEC JEITA Mass (reference value)
TTP-44DE 0.43
HM62V8100I Series
HM62V8100LBPI Series (TBP-48A)
July, 2001
Unit:
0.20
0.20
2.275
6.50
INDEX MARK
Pin#1 INDEX
9.80
0.75
0.15
0.75
1.375
0.35 0.05 0.08
0.25 0.05
0.10
Details part
Hitachi Code JEDEC JEITA Mass (reference value)
TBP-48A 0.13
HM62V8100I Series
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such fail-safes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen Postfach 201,D-85619 Feldkirchen Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281
Copyright Hitachi, Ltd., 2001. rights reserved. Printed Japan.
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