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HM62V16256CI Series
Wide Temperature Range Version SRAM (256-kword 16-bit)
ADE-203-1230C Rev. Jul. 2001
Description
Hitachi HM62V16256CI Series 4-Mbit static organized 262,144-word 16-bit. HM62V16256CI Series realized higher density, higher performance power consumption employing CMOS process technology (6-transistor memory cell). offers power standby power dissipation; therefore, suitable battery backup systems. packaged standard 44-pin plastic TSOPII.
Features
Single supply: Fast access time: (max) Power dissipation: Active: mW/MHz (typ)(VCC mW/MHz (typ) (VCC Standby: (typ) (VCC (typ) (VCC Completely static memory. clock timing strobe required Equal access cycle times Common data input output. Three state output Battery backup operation. chip selection battery backup Temperature range: +85°C
HM62V16256CI Series
Ordering Information
Type HM62V16256CLTTI-7 Access time Package 400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)
HM62V16256CI Series
Arrangement
44-pin TSOP I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 (Top view) I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 I/O9 I/O8
Description
name I/O0 I/O15 Function Address input Data input/output Chip select Chip select Write enable Output enable Lower byte select Upper byte select Power supply Ground
HM62V16256CI Series
Block Diagram
decoder
Memory matrix 2,048 2,048
I/O0 Input data control I/O15
Column Column decoder
Control logic
HM62V16256CI Series
Operation Table
I/O0 I/O7 High-Z High-Z High-Z Dout Dout High-Z High-Z High-Z I/O8 I/O15 High-Z High-Z High-Z Dout High-Z Dout High-Z High-Z Operation Standby Standby Standby Read Lower byte read Upper byte read Write Lower byte write Upper byte write Output disable
Note: VIL,
Absolute Maximum Ratings
Parameter Power supply voltage relative Terminal voltage relative Power dissipation Storage temperature range Storage temperature range under bias Symbol Tstg Tbias Value -0.5 -0.5* 0.3* +125
Unit
Notes: min: -3.0 pulse half-width Maximum voltage +4.6
Operating Conditions
Parameter Supply voltage Symbol Input high voltage Input voltage Ambient temperature range Note: -0.2 -0.3 2.5/3.0 Unit Note
min: -3.0 pulse half-width
HM62V16256CI Series
Characteristics
Parameter Input leakage current Output leakage current Symbol |ILI| |ILO Typ* Unit Test conditions VI/O VIL, VIH, Others VIH/VIL, Min. cycle, duty 100%, VIL, VIH, Others VIH/VIL Cycle time duty 100%, -0.5 -100
Operating current Average operating current
Standby current Standby current
SB1*
Output high voltage
=2.2 =2.7 =2.2
0.2-
Output voltage
=2.2 =2.7 =2.2
Notes: Typical values V/3.0 +25°C guaranteed. This characteristic guaranteed only L-version.
Capacitance +25°C, MHz)
Parameter Input capacitance Input/output capacitance Note: Symbol CI/O Unit Test conditions VI/O Note
This parameter sampled 100% tested.
HM62V16256CI Series
Characteristics +85°C, unless otherwise noted.)
Test Conditions Input pulse levels: (VCC (VCC Input rise fall time: Input/output timing reference levels: (VCC Output load: figures (Including scope jig)
V
Dout 3070 30pF 3150 Dout 50pF
RL=500
Output load (VCC
Output load (VCC
HM62V16256CI Series
Read Cycle
HM62V16256CI Parameter Read cycle time Address access time Chip select access time Symbol ACS1 ACS2 Output enable output valid Output hold from address change access time Chip select output low-Z CLZ1 CLZ2 enable low-z Output enable output low-Z Chip deselect output high-Z CHZ1 CHZ2 disable high-Z Output disable output high-Z Unit Notes
HM62V16256CI Series
Write Cycle
HM62V16256CI Parameter Write cycle time Address valid write Chip selection write Write pulse width valid write Address setup time Write recovery time Data write time overlap Data hold from write time Output active from write Output disable output High-Z Write output high-Z Symbol Unit Notes
Notes: CHZ, tOHZ tBHZ defined time which outputs achieve open circuit conditions referred output voltage levels. This parameter sampled 100% tested. given temperature voltage condition, less than both given device from device device. write occures during overlap CS1, high CS2, write begins latest transition among going low, going high, going going going low. write ends earliest transition among going high, going low, going high going high going high. measured from beginning write write. measured from later going going high write. measured from address valid beginning write. measured from earliest going high going write cycle.
HM62V16256CI Series
Timing Waveform
Read Cycle
Address tACS1 tCLZ1*2, tCHZ1 Valid address
tACS2 tCLZ2*2, tCHZ2*1, tBHZ*1,
tBLZ*2, tOLZ*2, Dout High impedance Valid data tOHZ*1,
HM62V16256CI Series
Write Cycle Clock)
Address Valid address tWR*7
tCW*5 tCW*5 tWP*4 tAS*6 tWHZ*1, Valid data
tOW*2 High impedance
Dout
HM62V16256CI Series
Write Cycle Clock, VIH)
Address Valid address tAS*6 tCW*5 tCW*5 tWR*7
tWP*4 Valid data
High impedance Dout
HM62V16256CI Series
Write Cycle (LB, Clock, VIH)
Address Valid address tCW*5 tCW*5 tAS*6 tWR*7
tWP*4 Valid data
High impedance Dout
HM62V16256CI Series
Data Retention Characteristics +85°C)
Parameter data retention Symbol Typ* Unit Test conditions*2 retention waveform
Data retention current
CCDR*1
Chip deselect data retention time Operation recovery time
Notes: This characteristic guaranteed only L-version, max. +40°C. controls address buffer, buffer, buffer, buffer, buffer buffer. controls data retention mode, levels (address, CS1, I/O) high impedance state. controls data retention mode, must other input levels (address, I/O) high impedance state. Typical values +25°C guaranteed. read cycle time.
HM62V16256CI Series
Data Retention Timing Waveform (CS1 Controlled) (VCC
Data retention mode
Data Retention Timing Waveform (CS1 Controlled) (VCC
Data retention mode
Data Retention Timing Waveform (CS2 Controlled) (VCC
Data retention mode
HM62V16256CI Series
Data Retention Timing Waveform (CS2 Controlled) (VCC
Data retention mode
Data Retention Timing Waveform (LB, Controlled) (VCC
Data retention mode
Data Retention Timing Waveform (LB, Controlled) (VCC
Data retention mode
HM62V16256CI Series
Package Dimensions
HM62V16256CLTTI Series (TTP-44DB)
January, 2001
18.41 18.81
Unit:
*0.30 0.10 0.25 0.05
0.80 0.13
0.80 11.76 0.20 *0.17 0.05 0.125 0.04 0.50 0.10
1.005
1.20
10.16
0.10
0.13 0.05
*Dimension including plating thickness Base material dimension
Hitachi Code JEDEC EIAJ Mass (reference value)
TTP-44DB 0.43
HM62V16256CI Series
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such fail-safes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen Postfach 201,D-85619 Feldkirchen Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281
Copyright Hitachi, Ltd., 2001. rights reserved. Printed Japan.
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