Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
HM628512BFP Series
SRAM (512-kword 8-bit)
ADE-203-1078B Rev. Nov. 1999 Description
Hitachi HM628512BFP 4-Mbit static organized 512-kword 8-bit. realizes higher density, higher performance power consumption employing Hi-CMOS process technology. packaged standard 32-pin SOP.
Features
Single supply Access time: 55/70 (max) Power dissipation Active: mW/MHz (typ) Standby: (max) Completely static memory. clock timing strobe required Equal access cycle times Common data input output: Three state output Directly compatible: inputs outputs
Ordering Information
Type HM628512BFP-5 HM628512BFP-7 Access time Package 525-mil 32-pin plastic (FP-32D)
HM628512BFP Series
Arrangement
32-pin I/O0 I/O1 I/O2 (Top view) I/O7 I/O6 I/O5 I/O4 I/O3
Description
name I/O0 I/O7 Function Address input Data input/output Chip select Output enable Write enable Power supply Ground
HM628512BFP Series
Block Diagram
Decoder Memory Matrix 1,024 4,096
I/O0 Input Data Control I/O7
Column Column Decoder
A17A15A8
Timing Pulse Generator Read/Write Control
HM628512BFP Series
Function Table
Mode selected Output disable Read Write Write current Dout High-Z High-Z Dout Ref. cycle Read cycle Write cycle Write cycle
Note:
Absolute Maximum Ratings
Parameter Power supply voltage Voltage relative Power dissipation Operating temperature Storage temperature Storage temperature under bias Symbol Topr Tstg Tbias Value -0.5 +7.0 -0.5* 0.3* +125
Unit
Notes: -3.0 pulse half-width Maximum voltage
Recommended Operating Conditions +70°C)
Parameter Supply voltage Symbol Input high voltage Input voltage Note: -0.3
Unit
-3.0 pulse half-width
HM628512BFP Series
Characteristics +70°C, ±10%
Parameter Input leakage current Output leakage current Operating power supply current: Operating power supply current Symbol |ILI| |ILO Typ*1 Unit Test conditions VIL, VI/O VIL, others VIH/VIL, cycle, duty 100% VIL, others VIH/VIL Cycle time duty 100% -1.0
Operating power supply current
Standby power supply current:
Standby power supply current (1): Output voltage Output high voltage Note:
Typical values +25°C specified loading, guaranteed.
Capacitance +25°C, MHz)
Parameter Input capacitance*
Symbol CI/O
Unit
Test conditions VI/O
Input/output capacitance* Note:
This parameter sampled 100% tested.
HM628512BFP Series
Characteristics +70°C, 10%, unless otherwise noted.)
Test Conditions Input pulse levels: Input rise fall time: Input output timing reference levels: Output load: Gate (HM628512BFP-5) (Including scope jig) Gate (100 (HM628512BFP-7) (Including scope jig)
Read Cycle
HM628512BFP Parameter Read cycle time Address access time Chip select access time Output enable output valid Chip selection output low-Z Output enable output low-Z Chip deselection output high-Z Output disable output high-Z Output hold from address change Symbol Unit Notes
HM628512BFP Series
Write Cycle
HM628512BFP Parameter Write cycle time Chip selection write Address setup time Address valid write Write pulse width Write recovery time output high-Z Data write time overlap Data hold from write time Output active from output high-Z Output disable output high-Z Symbol Unit Notes
Notes: defined time which outputs achieve open circuit conditions referred output voltage levels. This parameter sampled 100% tested. write occurs during overlap (tWP) write begins later transition going going low. write ends earlier transition going high going high. measured from beginning write write. measured from going write. measured from address valid beginning write. measured from earlier going high write cycle. During this period, pins output state that input signals opposite phase outputs must applied. transition occurs simultaneously with transition after transition, output remain high impedance state. Dout same phase write data this write cycle. Dout read data next address. during this period, pins output state. Therefore, input signals opposite phase outputs must applied them. write cycle with fixed, must satisfy following equation avoid problem data contention. tWHZ
HM628512BFP Series
Timing Waveforms
Read Timing Waveform VIH)
Address tOLZ tOHZ
Dout
Valid Data
HM628512BFP Series
Write Timing Waveform Clock)
Address
tOHZ Dout
Valid Data
HM628512BFP Series
Write Timing Waveform Fixed)
Address
tWHZ
Dout
Valid Data
HM628512BFP Series
Package Dimensions
HM628512BFP Series (FP-32D)
Unit:
20.45 20.95
1.00
3.00 *0.22 0.05 0.20 0.04
11.30
14.14 0.30 1.42
0.12 0.15 0.10
0.80 0.20
1.27 *0.40 0.08 0.38 0.06
0.10 0.15
*Dimension including plating thickness Base material dimension
Hitachi Code JEDEC EIAJ Weight (reference value)
FP-32D Conforms
HM628512BFP Series
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such fail-safes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write
Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223
Copyright Hitachi, Ltd., 1998. rights reserved. Printed Japan.

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