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High Speed SRAM (512-kword 8-bit)
HM628511HC Series
ADE-203-1197C Rev. Feb. 2003 Description
HM628511HC Series 4-Mbit high speed static organized 512-k word 8-bit. realized high speed access time employing CMOS process (6-transistor memory cell) high speed circuit designing technology. most appropriate application which requires high speed, high density memory wide width configuration, such cache buffer memory system. packaged 400-mil 36-pin plastic SOJ.
Features
Single supply: Access time: 10/12 (max) Completely static memory clock timing strobe required Equal access cycle times Directly compatible inputs outputs Operating current: 140/130 (max) standby current: (max) CMOS standby current (max) (max) (L-version) Data retention current: (max) (L-version) Data retention voltage: (min) (L-version) Center type
HM628511HC Series
Ordering Information
Type HM628511HCJP-10 HM628511HCJP-12 HM628511HCLJP-10 HM628511HCLJP-12 Access time Device marking HM628511CJP10 HM628511CJP12 HM628511CLJP10 HM628511CLJP12 Package 400-mil 36-pin plastic (CP-36D)
Rev. Feb. 2003, page
HM628511HC Series
Arrangement
36-pin I/O1 I/O2 I/O3 I/O4 (Top View) I/O8 I/O7 I/O6 I/O5
Description
name I/O1 I/O8 Function Address input Data input/output Chip select Output enable Write enable Power supply Ground connection
Rev. Feb. 2003, page
HM628511HC Series
Block Diagram
(LSB) (MSB) I/O1 I/O8
Internal voltage generator decoder 1024-row 32-column 16-block 8-bit (4,194,304 bits)
Column Input data control Column decoder
(LSB)
(MSB)
Rev. Feb. 2003, page
HM628511HC Series
Operation Table
Note: Mode Standby Output disable Read Write Write current ISB, ISB1 High-Z High-Z Dout Ref. cycle Read cycle Write cycle Write cycle
VIH, VIL,
Absolute Maximum Ratings
Parameter Supply voltage relative Voltage relative Power dissipation Operating temperature Storage temperature Storage temperature under bias Symbol Topr Tstg Tbias Value -0.5 +7.0 -0.5* VCC+0.5*
Unit
+125
Notes: (min) -2.0 pulse width (under shoot) (max) VCC+2.0 pulse width (over shoot)
Recommended Operating Conditions
+70°C)
Parameter Supply voltage Symbol VCC* VSS* Input voltage Notes:
-0.5*
0.5*
Unit
(min) -2.0 pulse width (under shoot) (max) VCC+2.0 pulse width (over shoot) supply voltage with pins must same level. supply voltage with pins must same level.
Rev. Feb. 2003, page
HM628511HC Series
Characteristics
+70°C, 10%,
Parameter Input leakage current Output leakage current Operation power supply current cycle Symbol IILII IILOI Typ*
Unit
Test conditions cycle VIL, lout Other inputs VIH/VIL cycle, VIH, Other inputs VIH/VIL
cycle Standby power supply current
ISB1
Output voltage
0.6*
1.2*
Notes: Typical values +25°C guaranteed. This characteristics guaranteed only L-version.
Capacitance
+25°C, MHz)
Parameter Input capacitance* Note:
Symbol CI/O
Unit
Test conditions VI/O
Input/output capacitance*
This parameter sampled 100% tested.
Rev. Feb. 2003, page
HM628511HC Series
Characteristics
+70°C, 10%, unless otherwise noted.) Test Conditions Input pulse levels: V/0.0 Input rise fall time: Input output timing reference levels: Output load: figures (Including scope jig)
Dout Zo=50
RL=50
Dout
Output load
Output load (for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, tOW)
Read Cycle
HM628511HC Parameter Read cycle time Address access time Chip select access time Output enable output valid Output hold from address change Chip select output low-Z Output enable output low-Z Chip deselect output high-Z Output disable output high-Z Symbol tACS tCLZ tOLZ tCHZ tOHZ Unit Notes
Rev. Feb. 2003, page
HM628511HC Series
Write Cycle
HM628511HC Parameter Write cycle time Address valid write Chip select write Write pulse width Address setup time Write recovery time Data write time overlap Data hold from write time Write disable output low-Z Output disable output high-Z Write enable output high-Z Symbol tOHZ tWHZ Unit Notes
Notes: Transition measured ±200 from steady voltage with output load (B). This parameter sampled 100% tested. Address should valid prior coincident with transition low. and/or must high during address transition time. during this period, pins output state. Then, data input signals opposite phase outputs must applied them. transition occurs simultaneously with transition after transition, output remains high impedance state. measured from latest address transition later going low. measured from earlier going high first address transition. write occurs during overlap write begins latest transition among going going low. write ends earliest transition among going high going high. measured from beginning write write. measured from later going write.
Rev. Feb. 2003, page
HM628511HC Series
Timing Waveforms
Read Timing Waveform VIH)
Address
Valid address tCHZ
tACS
tOHZ
tOLZ tCLZ Dout High impedance Valid data
Read Timing Waveform VIH, VIL, VIL)
Address Dout
Valid address
Valid data
Rev. Feb. 2003, page
HM628511HC Series
Read Timing Waveform VIH, VIL, VIL)*
tACS tCLZ Dout High impedance Valid data High impedance tCHZ
Write Timing Waveform Controlled)
Address Valid address
tOHZ Dout High impedance*5
Valid data
Rev. Feb. 2003, page
HM628511HC Series
Write Timing Waveform Controlled)
Address Valid address tWHZ Dout High impedance*5
Valid data
Rev. Feb. 2003, page
HM628511HC Series
Data Retention Characteristics
+70°C) This characteristics guaranteed only L-version.
Parameter data retention Symbol Unit Test conditions retention waveform
Data retention current
ICCDR
Chip deselect data retention time Operation recovery time
tCDR
Data Retention Timing Waveform
Data retention mode
Rev. Feb. 2003, page
HM628511HC Series
Package Dimensions
HM628511HCJP/HCLJP Series (CP-36D)
July, 2002
23.25 23.62
10.16 0.13
Unit:
3.50 0.26
0.74
2.85 0.12
11.18 0.13
1.30
0.80 +0.25 -0.17
*0.43 0.10 0.41 0.08
1.27
9.40 0.25
Hitachi Code JEDEC JEITA Mass (reference value) CP-36D Conforms Conforms
0.10
*Dimension including plating thickness Base material dimension
Rev. Feb. 2003, page
HM628511HC Series
Disclaimer
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such fail-safes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-6538-6533/6538-8577 <65>-6538-6933/6538-3877 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-2735-9218 <852>-2730-0281
Copyright Hitachi, Ltd., 2002. rights reserved. Printed Japan.
Colophon
Rev. Feb. 2003, page
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