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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
PF08109B
Power Amplifier Module E-GSM DCS1800 Dual Band Handy Phone
ADE-208-821C Rev.3 Feb. 2001 Application
Dual band Amplifier E-GSM (880 MHz) DCS1800 (1710 1785 MHz) nominal battery
Features
dual band amplifire Simple external circuit including output matching circuit High gain 3stage amplifier input Lead less thin Small package 13.75 High efficiency nominal output power E-GSM 32.7 DCS1800
Arrangement
RF-O-12
Pout Pout Vtxlo Vapc Vapc
PF08109B
Absolute Maximum Ratings
25°C)
Item Supply voltage Supply current Symbol Vtxlo voltage Vapc voltage Input power Operating case temperature Storage temperature Output power Vtxlo Vapc (op) Tstg Pout Pout Rating +100 +100 Unit
Note: maximum ratings shall valid over both E-GSM-band (880 MHz), DCS1800-band (1710 1785 MHz).
Electrical Characteristics
25°C)
Item Drain cutoff current Vapc control current Vtxlo control current Symbol Iapc Itxlo Unit Test Condition Vapc Vapc =2.2 Vtxlo
Rev.3, Feb. 2001, page
PF08109B
Electrical Characteristics E-GSM mode
25°C) Test conditions unless otherwise noted: MHz, dBm, 25°C, Vapc Pulse operation with pulse width duty cycle shall used.
Item Frequency range Total efficiency (Hi) harmonic distortion harmonic distortion Input VSWR Total efficiency (Lo) Output power (1)(Hi) Output power (1)(Lo) Output power (2)(Hi) Output power (2)(Lo) Isolation Isolation RF-output when active Switching time Stability Symbol T(Hi) H.D. H.D. VSWR (in) T(Lo) Pout (1)(Hi) Pout (1)(Lo) Pout (2)(Hi) Pout (2)(Lo) 35.5 30.8 33.5 28.8 36.0 31.3 34.0 29.3 Unit Pout 30.8dBm, Vtxlo 2.4V, Vapc controlled Vapc 2.2V, Vtxlo 0.1V Vapc 2.2V, Vtxlo 2.4V 3.0V, Vapc 2.2V, +85°C, Vtxlo 0.1V 3.0V, Vapc 2.2V, +85°C, Vtxlo 2.4V Vapc 0.2V, Vtxlo 0.1V Pout 35.5dBm, Vtxlo 0.1V Measured 1760 1830MHz Pout 35.5dBm, Vtxlo 0.1V 5.1V, Pout 35.5dBm, Vtxlo 0.1, 2.4V, Vapc 2.2V, GSMpulse. Output VSWR phases 5.1V, 20sec., Pout 35.5dBm, Vtxlo 0.1, 2.4V, Vapc 2.2V, pulse. Output VSWR phases Pout 35.5dBm, Vtxlo 0.1V, Vapc controlled Test Condition
parasitic oscillation
Load VSWR tolerance
degradation
Rev.3, Feb. 2001, page
PF08109B
Electrical Characteristics DCS1800 mode
25°C) Test conditions unless otherwise noted: 1710 1785 MHz, dBm, 25°C, Vapc =0.1 Pulse operation with pulse width duty cycle shall used.
Item Frequency range Total efficiency (Hi) harmonic distortion harmonic distortion Input VSWR Total efficiency (Lo) Output power Output power Isolation Isolation RF-output when active Switching time Stability Symbol T(Hi) H.D. H.D. VSWR (in) T(Lo) Pout Pout 1710 32.7 30.7 33.2 31.2 1785 Unit Pout 26.7dBm, Vapc controlled Vapc 2.2V, 3.0V, Vapc 2.2V, +85°C Vapc 0.2V Pout 32.7dBm, Measured 1710 1785MHz Pout 32.7dBm 5.1V, Pout 32.7dBm, Vapc 2.2V, pulse. Output VSWR phases 5.1V, Pout 32.7dBm, 20sec., Vapc 2.2V, pulse. Output VSWR phases Pout 32.7dBm, Vapc controlled Test Condition
parasitic oscillation
Load VSWR tolerance
degradation
Rev.3, Feb. 2001, page
PF08109B
Characteristic Curves
High mode,
Pout (dBm)
MHz, Vapc control, Vtxlo dBm, 25°C,
Pout
Vapc
mode,
Pout (dBm)
MHz, Vapc control, Vtxlo dBm, 25°C,
Pout
Vapc
Rev.3, Feb. 2001, page
PF08109B
High mode,
Pout (dBm)
MHz, Vapc control, Vtxlo dBm, 25°C,
Pout
Vapc
mode,
Pout (dBm)
MHz, Vapc control, Vtxlo dBm, 25°C,
Pout
Vapc
Rev.3, Feb. 2001, page
PF08109B
High mode
Vapc dBm, 25°C, High mode: Vtxlo mode: Vtxlo
Pout (dBm)
mode
(MHz)
1000
High mode
mode
Vapc control, dBm, 25°C, High mode: Pout 35.5 Vtxlo mode: Pout 30.8 Vtxlo
(MHz)
1000
Rev.3, Feb. 2001, page
PF08109B
High mode
Vapc Vtxlo 25°C,
Pout (dBm)
(dBm)
mode
Vapc Vtxlo 25°C,
Pout (dBm)
(dBm)
Rev.3, Feb. 2001, page
PF08109B
High mode
(dBm)
Pout 35.5 dBm, Vapc control, Vtxlo 25°C,
High mode
Pout 34.8 dBm, Vapc control, Vtxlo 25°C,
(dBm)
Rev.3, Feb. 2001, page
PF08109B
mode
Pout 30.8 dBm, Vapc control, Vtxlo 25°C,
(dBm)
Rev.3, Feb. 2001, page
PF08109B
MHz, Vapc control, dBm, 25°C, High mode: Vtxlo mode: Vtxlo
mode High mode
Pout (dBm)
MHz, Vapc control, dBm, 25°C, High mode: Vtxlo mode: Vtxlo
High mode mode Pout (dBm)
Rev.3, Feb. 2001, page
PF08109B
mode High mode
MHz, Vapc control, dBm, 25°C, High mode: Vtxlo mode: Vtxlo
Pout (dBm)
MHz, Vapc control, dBm, 25°C, High mode: Vtxlo mode: Vtxlo
High mode mode Pout (dBm)
Rev.3, Feb. 2001, page
PF08109B
1710
Pout (dBm)
1710 MHz, Vapc control, dBm, 25°C,
Pout
Vapc
1785
Pout (dBm)
1785 MHz, Vapc control, dBm, 25°C,
Pout
Vapc
Rev.3, Feb. 2001, page
PF08109B
Vapc control, dBm, 25°C,
1785
1710 Pout (dBm)
Rev.3, Feb. 2001, page
PF08109B
Pout (dBm)
Vapc dBm, 25°C,
1600
1650
1700
1750 (MHz)
1800
1850
1900
Pout 32.7
Pout 26.7 1600 1650 1700 1750 (MHz)
Vapc control, dBm, 25°C,
1800
1850
1900
Rev.3, Feb. 2001, page
PF08109B
Vapc dBm, 25°C,
1710
Pout (dBm)
1785
(dBm)
Vapc control, Pout 32.7 dBm, 25°C,
1785
1710
(dBm)
Rev.3, Feb. 2001, page
PF08109B
Vapc control, Pout 26.7 dBm, 25°C,
1785
1710
(dBm)
Cross band Isolation RF-output when active (dBm)
Vapc control, dBm, 25°C,
1785
1710
Pout (dBm)
Rev.3, Feb. 2001, page
PF08109B
mode dBm, Vapc 25°C, Vtxlo
Pout (dBm)
mode dBm, Vapc 25°C, Vtxlo
Pout (dBm)
Rev.3, Feb. 2001, page
PF08109B
mode dBm, 35.5 dBm, 25°C, Vtxlo
mode dBm, 30.8 dBm, 25°C, Vtxlo
Rev.3, Feb. 2001, page
PF08109B
dBm, Vapc 25°C 1710 1785
Pout (dBm)
dBm, 32.7 dBm, 25°C 1710 1785
Rev.3, Feb. 2001, page
PF08109B
MHz, Vapc control, Vtxlo dBm, 25°C, 1760
Isolation RF-output when active (dBm)
measured
Pout (dBm)
MHz, Vapc control, Vtxlo dBm, 25°C, 1830
Isolation RF-output when active (dBm)
measured
Pout (dBm)
Rev.3, Feb. 2001, page
PF08109B
Package Dimensions
Unit:
11.0
(Upper side)
11.0
(10.8)
13.75 13.75
(3.3) (1.4) (1.0) (3.3) (1.0) (1.4) (3.4)
(1.2) (0.8) (1.4) (1.0) (1.4) (1.4) (0.8) (0.8) (1.45)
(1.0) (1.0) (2.8) (1.0) (1.0)
Pout Pout Vtxlo Vapc Vapc Remark: Coplanarity bottom side terminals less than 0.1mm.
Hitachi Code JEDEC JEITA Mass (reference value) RF-O-12
(1.4)
11.0
(2.6) (2.6)
(2.4) (2.4)
(1.1) (3.7)
(3.7)
(1.2)
(2.5) (2.5)
(Bottom side)
Rev.3, Feb. 2001, page
(4.6)
(4.6)
PF08109B
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap.
Notes regarding these materials
These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
http://www.renesas.com
Copyright 2003. Renesas Technology Corporation, rights reserved. Printed Japan.
Colophon
Rev.3, Feb. 2001, page
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