M3D379 BLF1049 Base station LDMOS transistor Product specifi

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M3D379 BLF1049 Base station LDMOS transistor Product specifi

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M3D379
BLF1049 Base station LDMOS transistor
Product specification Supersedes data 2001 2003
Philips Semiconductors
Product specification
Base station LDMOS transistor
FEATURES Typical performance supply voltage 1-tone 1000 Output power Gain 16.5 Efficiency EDGE output power (AV) ACPR400 (EDGE; (AV) (EDGE; Easy power control Excellent ruggedness High power gain Excellent thermal stability Designed broadband operation (800 1000 MHz) Internally matched ease use. APPLICATIONS power amplifier GSM, EDGE CDMA base stations multicarrier applications 1000 frequency range. QUICK REFERENCE DATA Typical performance common source test circuit. MODE OPERATION 2-tone 1-tone EDGE (MHz) (PEP) (AV) (dB) 15.5 16.5 (dBc)
view
BLF1049
DESCRIPTION LDMOS power transistor base station applications frequencies from 1000 MHz. PINNING SOT502A drain gate source; connected flange DESCRIPTION
MBK394
Fig.1 Simplified outline SOT502A
ACPR (dBc)
(AV)
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL Tstg drain-source voltage gate-source voltage storage temperature junction temperature PARAMETER MIN. MAX. UNIT
2003
Philips Semiconductors
Product specification
Base station LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Notes Thermal resistance determined under operating conditions. Depending mounting condition application. CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGSth MIN. TYP. PARAMETER thermal resistance from junction case thermal resistance from junction heatsink CONDITIONS (AV), note (AV), note
BLF1049
VALUE 0.42 0.62
UNIT
MAX.
UNIT
APPLICATION INFORMATION performance common source class-AB circuit; unless otherwise specified. Mode operation: 2-tone spacing; 1130 SYMBOL PARAMETER gain power drain efficiency input return loss third order inter modulation distortion CONDITIONS (PEP) MIN. 14.6 TYP. 15.5 MAX. UNIT
Mode operation: EDGE; SYMBOL ACPR (AV) peak PARAMETER gain power drain efficiency adjacent channel power ratio average signal distortion peak signal distortion CONDITIONS (AV) MIN. TYP. MAX. UNIT
Mode operation: 1-tone 1000 SYMBOL PARAMETER gain power drain efficiency CONDITIONS MIN. TYP. 16.5 MAX. UNIT
2003
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
MLE061
(dB)
ACPR (dBc)
MLE062
EVMrms (AV)
ACPR400
(AV)(W)
(AV)(W)
MHz; MHz;
Fig.3 Fig.2 EDGE power gain efficiency functions load power; typical values.
EDGE ACPR400 functions average load power; typical values.
MLE064
gain (dB) 16.5
MLE063
(dB)
(1,2,3)
15.5
14.5
(AV)
(PEP)
920.0 MHz; 920.1 MHz. gain gain gain
MHz; 1000
Fig.5 Fig.4 1-tone power gain efficiency functions load power; typical values.
2-tone power gain efficiency functions load power different temperatures.
2003
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
MLE065
MLE066
(dBc)
(dBc)
(PEP)
(PEP)
920.0 MHz; 920.1 MHz.
920.0 MHz; 920.1 MHz.
Fig.6
Third order intermodulation distortion function load power different temperatures.
Fig.7
Fifth order intermodulation distortion function load power different temperatures.
MLE067
han(3)
MLE068
(dBc)
gain (dB)
(PEP)
(PEP)
920.0 MHz;
920.0 MHz; 920.1 MHz. 1.45 1.45
Fig.8
Seventh order intermodulation distortion function load power different temperatures.
Fig.9
Power gain drain efficiency functions peak envelope load power; typical values.
2003
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
MLE069
handbook, halfpage
MLE070
(dBc)
-0.5
(PEP)
0.85
0.95
(GHz)
920.0 MHz; 920.1 MHz. Class-AB operation; 1125 Values comprised different parameters.
Fig.10 Intermodulation distortion function peak envelope load power; typical values.
Fig.11 Input impedance function frequency (series components); typical values.
handbook, halfpage
MLE071
-0.5
drain gate
MGS998
0.85
0.95
(GHz)
Class-AB operation; 1125 Values comprised different parameters.
Fig.12 Input impedance function frequency (series components); typical values.
Fig.13 Definition transistor impedance.
2003
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
handbook, full pagewidth
Vbias
Vsupply
MDB168
Fig.14 Test circuit MHz.
2003
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
handbook, full pagewidth
PHILIPS
Input Vbias
PHILIPS
Output
BLF1049
PHILIPS
Input
PHILIPS
Output
MLE073
Dimensions components situated side copper-clad Rogers 6006 printed-circuit board 6.15); thickness other side unetched serves ground plane.
Fig.15 Component layout test circuit.
2003
Philips Semiconductors
Product specification
Base station LDMOS transistor
List components (see Figs COMPONENT C13, C14, C15, C16, C10, C11, L12, L15, Notes American Technical Ceramics type 100A capacitor same quality. DESCRIPTION multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note tantalum capacitor trimmer capacitor multilayer ceramic chip capacitor potentiometer 7808 voltage regulator BLF1049 LDMOS transistor stripline; note stripline; note stripline; note stripline; note ferroxcube stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note VALUE
BLF1049
DIMENSIONS
5.22 0.92 6.47 0.92 5.38 0.92 9.73 0.92 1.82 8.15 17.9 0.92 18.45 28.3 9.95 5.38 37.6 3.35 2.36 0.92 4.22 0.92
striplines double copper-clad Rogers 6006 printed-circuit board 6.15); thickness 0.64
2003
Philips Semiconductors
Product specification
Base station LDMOS transistor
PACKAGE OUTLINE Flanged LDMOST ceramic package; mounting holes; leads
BLF1049
SOT502A
scale
DIMENSIONS (millimetre dimensions derived from original inch dimensions) UNIT inches 4.72 3.43 0.186 0.135 12.83 12.57 0.15 0.08 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 1.345 1.335 9.91 9.65 0.390 0.380 0.25 0.01 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
2003
Philips Semiconductors
Product specification
Base station LDMOS transistor
DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BLF1049
This data sheet contains data from objective specification product development. Philips Semiconductors reserves right change specification manner without notice. This data sheet contains data from preliminary specification. Supplementary data will published later date. Philips Semiconductors reserves right change specification without notice, order improve design supply best possible product. This data sheet contains data from product specification. Philips Semiconductors reserves right make changes time order improve design, manufacturing supply. Relevant changes will communicated Customer Product/Process Change Notification (CPCN).
Preliminary data Qualification
Product data
Production
Notes Please consult most recently issued data sheet before initiating completing design. product status device(s) described this data sheet have changed since this data sheet published. latest information available Internet data sheets describing multiple type numbers, highest-level product status determines data sheet status. DEFINITIONS Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification. DISCLAIMERS Life support applications These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes products including circuits, standard cells, and/or software described contained herein order improve design and/or performance. When product full production (status `Production'), relevant changes will communicated Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes responsibility liability these products, conveys licence title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
2003
Philips Semiconductors worldwide company
Contact information additional information please visit Fax: 24825 sales offices addresses send e-mail
Koninklijke Philips Electronics N.V. 2003
SCA75
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
613524/03/pp12
Date release: 2003
Document order number:
9397 11123

M3D379 BLF1049 Base station LDMOS transistor Product specifi

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