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AFM06P3-212, AFM06P3-213 Features Output Power High Associated Ga


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Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213 Features
Output Power High Associated Gain, High Power Added Efficiency, Broadband Operation, DC-18 0.25 Ti/Pd/Au Gates Passivated Surface
Source Gate Drain Source Gate Source Drain Source
Description
AFM06P3-212, high performance power GaAs MESFET chips industry standard ceramic micro-x package, having gate length 0.25 total gate periphery These devices have excellent gain power performance through GHz, making them suitable wide range commercial military applications oscillator amplifier circuits. They employ Ti/Pd/Au gate metallization surface passivation ensure rugged, reliable part.
Absolute Maximum Ratings
Characteristic Drain Source Voltage (VDS) Gate Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value IDSS +150°C 175°C
Electrical Specifications 25°C
Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-Off Voltage (VP) Gate Drain Breakdown Voltage (Vbgd) Output Power Compression Gain Compression Power Added Efficiency (add) Test Conditions Min. 130.0 90.0 Typ. 200.0 120.0 12.0 22.0 23.0 Max. 270.0 Unit
Alpha Industries, Inc. [781] 935-5150 [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject change without notice. 6/99A
Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213
Typical Performance Data
-0.5
Total Power Dissipation
1.50 1.25 1.00 0.75 0.50 0.25
(mA)
-1.0 -1.5 -2.0 -2.5
TBASE (°C)
Power Derating
Typical S-Parameters (VDS
Freq. (GHz) Mag. 0.827 0.841 0.776 0.773 0.772 0.729 0.652 0.680 0.720 0.666 0.631 0.644 0.657 0.748 0.847 0.850 0.805 0.847 0.831 0.791 0.866 0.836 0.853 0.958 0.844 0.733 Ang. -37.8264 -71.7158 -95.9016 -116.1009 -136.3639 -159.5267 177.0366 154.3013 135.1126 117.7185 100.5973 76.8920 64.6829 52.4407 37.8038 22.3398 8.2106 -2.1121 -5.6214 -6.5681 -20.5483 -35.5536 -52.6197 -69.2200 -81.7547 -104.6242 Mag. 7.3390 6.0499 5.0784 4.4165 4.0687 3.6170 3.3407 3.1085 2.8509 2.6700 2.3131 2.0077 1.9441 1.8819 1.7404 1.5849 1.4012 1.2311 1.1617 1.0774 1.1110 1.1102 1.0759 1.0823 1.0406 0.9783 Ang. 153.0160 122.7182 98.6981 83.7214 61.0411 42.4229 26.8719 11.1292 -1.4693 -17.9531 -33.8962 -49.6463 -62.8550 -81.2585 -98.7912 -114.6893 -126.9353 -137.7326 -149.0193 -161.2119 -177.5857 164.5367 146.8712 131.6291 112.8443 88.5591 Mag. 0.0202 0.0340 0.0423 0.0496 0.0574 0.0621 0.0695 0.0769 0.0818 0.0898 0.0907 0.0921 0.1041 0.1203 0.1282 0.1336 0.1314 0.1283 0.1356 0.1371 0.1568 0.1726 0.1744 0.1820 0.1822 0.1721 Ang. 76.0460 57.6193 43.4674 41.8927 28.5307 20.3616 14.1562 9.6583 3.2226 -5.3931 -14.6182 -24.4491 -27.3280 -42.4402 -56.5826 -70.6290 -79.1178 -86.3122 -95.3322 -105.6583 -119.1149 -134.0608 -148.6982 -161.9434 -177.5051 159.3426 Mag. 0.5006 0.3925 0.3538 0.2474 0.2514 0.2539 0.2666 0.2744 0.2352 0.2551 0.2561 0.2076 0.2744 0.3667 0.3722 0.3581 0.3802 0.4026 0.5087 0.5497 0.4284 0.4058 0.4751 0.5114 0.4558 0.3791 Ang. -36.961 -44.484 -60.536 -67.747 -80.500 -105.251 -122.438 -136.476 -147.323 -164.635 178.758 166.633 135.000 119.222 107.510 88.987 62.424 43.087 38.695 33.199 22.075 -11.227 -42.014 -46.505 -62.423 -103.875 22.5047 20.7939 19.4986 18.5080 17.6540 14.9166 16.0668 15.4208 13.3968 10.7345 9.1700 9.2358 11.9422 11.3280 10.7432 10.2803 9.8217 9.3289 8.9538 8.5032 8.0846 7.9027 7.7438 7.5681 4.2994 MAG/ (dB)
Alpha Industries, Inc. [781] 935-5150 [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject change without notice. 6/99A
Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213
0.036 (0.91
0.036 (0.91 PLACES 0.020 (0.51 PLACES GATE 0.07 (1.78 0.027 (0.70 PLACES
SOURCE DRAIN 0.070 (1.78
SOURCE DRAIN
0.020 (0.51 PLACES GATE
0.070 (1.78 PLACES
SOURCE 0.005 (0.13 PLACES
SOURCE
0.005 (0.13 PLACES
0.067 (1.70 MAX.
0.067 (1.70 Max.
Alpha Industries, Inc. [781] 935-5150 [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject change without notice. 6/99A

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