POWER MOSFET SURFACE MOUNT(SMD-1) Part Number IRFN9140 RDS(on) 0.

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POWER MOSFET SURFACE MOUNT(SMD-1) Part Number IRFN9140 RDS(on) 0.

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91553D
POWER MOSFET SURFACE MOUNT(SMD-1)
Part Number IRFN9140 RDS(on) 0.20 -18A
IRFN9140 JANTX2N7236U JANTXV2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL
HEXFET MOSFET TECHNOLOGY
HEXFET® MOSFET technology International
Rectifier's advanced line power MOSFET transistors. efficient geometry design achieves very on-state resistance combined with high transconductance. HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling electrical parameter temperature stability. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, virtually application where high reliability required. HEXFET transistor's totally isolated package eliminates need additional isolating material between device heatsink. This improves thermal efficiency reduces drain capacitance.
SMD-1
Features:
Simple Drive Requirements Ease Paralleling Hermetically Sealed Electrically Isolated Surface Mount Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings
Parameter
-10V, 25°C -10V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight footnotes refer last page 12.5 -5.0 (for 2.6(typical)
Units
W/°C
V/ns
www.irf.com
2/5/02
IRFN9140
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
-100 -2.0
Units
-0.087 0.20 0.22 -4.0 -250 -100 35.2 V/°C
Test Conditions
-1.0mA Reference 25°C, -1.0mA -10V, -11A -10V, -18A VGS, -250µA -15V, -11A VDS= -80V, VGS= -80V 125°C -20V -10V, -18A -50V -50V, -18A =9.1, -10V
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source -25V 1.0MHz
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1400
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-4.2
Test Conditions
25°C, -18A, 25°C, -18A, di/dt -100A/µs -30V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction Case Junction Board
Units
°C/W
Test Conditions
Soldered copper-clad board
footnotes refer last page
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IRFN9140
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRFN9140
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRFN9140
D.U.T.
-10V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFN9140
-10V -20V
12a. Unclamped Inductive Test Circuit
12c. Maximum Avalanche Energy Drain Current
(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-10V
.2µF .3µF
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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D.U.T.
-10V
IRFN9140
Repetitive Rating; Pulse width limited
maximum junction temperature. =-25V, starting 25°C, 3.1mH Peak -18A, -10V
Foot Notes:
-18A, di/dt -100A/µs,
-100V, 150°C
Pulse width Duty Cycle
Case Outline Dimensions SMD-1
ASSIGNMENTS DRAIN GATE SOURCE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 01/02
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POWER MOSFET SURFACE MOUNT(SMD-1) Part Number IRFN9140 RDS(on) 0.

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