High Speed Silicon Photodiode BPV10NF high sensitive wide bandwid

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High Speed Silicon Photodiode BPV10NF high sensitive wide bandwid

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BPV10NF
High Speed Silicon Photodiode
BPV10NF high sensitive wide bandwidth photodiode standard plastic package. black epoxy universal filter, spectrally matched GaAs (l=950nm) GaAlAs (l=870nm) emitters. BPV10NF optimized serial infrared links according IrDA standard.
8390
Features
Extra fast response times High modulation bandwidth (>100 MHz) High radiant sensitivity Radiant sensitive area A=0.78mm2 junction capacitance Standard package with universal filter
Angle half sensitivity
Applications
Infrared high speed remote control free transmission systems with high modulation frequencies high data transmission rate requirements especially direct point point links. BPV10NF ideal design transmission systems according IrDA requirements carrier frequency based systems (e.g. FSK- coded, MHz). Recommended emitter diodes TSHF 5.-series TSSF 4500.
Absolute Maximum Ratings
Tamb 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol Tamb Tstg RthJA Value -55.+100 -55.+100 Unit
from body,
Document Number 81503 Rev. 20-May-99
www.vishay.com
BPV10NF
Vishay Telefunken Basic Characteristics
Tamb 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Open Circuit Voltage Short Circuit Current Reverse Light Current Test Conditions MHz, mW/cm2, mW/cm2, mW/cm2, mW/cm2, mW/cm2, Symbol V(BR) TKIra s(l) -0.1 0.55 790.1050 3x10-14 3x1012 Unit
cmHz/
Temp. Coefficient
Absolute Spectral Sensitivity Angle Half Sensitivity Wavelength Peak Sensitivity Range Spectral Bandwidth Quantum Efficiency Noise Equivalent Power VR=20 l=950 Detectivity VR=20 l=950 Rise Time Fall Time
l0.5
l=820
VR=50 RL=50 VR=50 RL=50
l=820
Typical Characteristics (Tamb 25_C unless otherwise specified)
Relative Reverse Light Current 1000 Reverse Dark Current
VR=20V
8436
VR=5V Ee=1mW/cm2 l=870nm
8621
Tamb Ambient Temperature
Tamb Ambient Temperature
Figure Reverse Dark Current Ambient Temperature
Figure Relative Reverse Light Current Ambient Temperature
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Document Number 81503 Rev. 20-May-99
BPV10NF
Relative Spectral Sensitivity
8426
1000 Reverse Light Current
VR=5V l=870nm
0.01
8622
1050
1150
Irradiance
Wavelength
Figure Reverse Light Current Irradiance
Reverse Light Current mW/cm2 mW/cm2 mW/cm2 mW/cm2 0.05 mW/cm2 0.02 mW/cm2
8623
Figure Relative Spectral Sensitivity Wavelength
Relative Sensitivity
l=870nm
8624
Reverse Voltage
Figure Reverse Light Current Reverse Voltage
Figure Relative Radiant Sensitivity Angular Displacement
Diode Capacitance
8439
f=1MHz
Reverse Voltage
Figure Diode Capacitance Reverse Voltage
Document Number 81503 Rev. 20-May-99
www.vishay.com
BPV10NF
Vishay Telefunken Dimensions
12198
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Document Number 81503 Rev. 20-May-99
BPV10NF
Vishay Telefunken Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
Document Number 81503 Rev. 20-May-99
www.vishay.com

High Speed Silicon Photodiode BPV10NF high sensitive wide bandwid

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