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TLP227G(N),TLP227G-2(N) CORDLESS TELEPHONE MODEM TOSHIBA TLP


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TLP227G(N),TLP227G-2(N)
TLP227G(N),TLP227G-2(N)
CORDLESS TELEPHONE MODEM
TOSHIBA TLP227G series consist gallium arsenide infrared emitting diode optically coupled photo-MOS plastic package. TLP227G series bi-directional switch, which replace mechanical relays many applications. Unit:
TLP227G
FEATURES
TLP227G TLP227G-2 Trigger Current On-State Current On-State Resistance Isolation Voltage (DIP4), Channel Type Form (DIP8), Channel Type Form (MAX.) (MAX.) (MAX.) 2500 Vrms (MIN.)
Peak Off-State Voltage (MIN.) TOSHIBA Weight: 0.26
Form
11-5B2
CONFIGURATION (TOP VIEW)
TLP227G TLP227G-2
Unit:
TLP227G-2
ANODE CATHODE DRAIN DRAIN
ANODE CATHODE DRAIN DRAIN DRAIN DRAIN
TOSHIBA Weight: 0.54
Form
11-10C4
2003-01-28
TLP227G(N),TLP227G-2(N)
INTERNAL CIRCUIT
MAXIMUM RATINGS 25°C)
CHARACTERISTIC Forward Current Forward Current Derating 25°C) Peak Forward Current (100ms pulse, pps) Reverse Voltage Junction Temperature Off-State Output Terminal Voltage TLP227G DETECTOR On-State Current TLP227G-2 Both Channel (Note TLP227G On-State Current Derating 25°C) Channel TLP227G-2 Both Channel (Note Junction Temperature Storage Temperature Range Operating Temperature Range Lead Soldering Temperature Isolation Voltage (AC, minute, R.H. 60%) (Note Tstg Topr Tsol -55~125 -40~85 2500 Vrms DION/°C -1.2 mA/°C Channel SYMBOL DIF/°C VOFF RATING -0.5 UNIT mA/°C
(Note :Two channels operating simultaneously. (Note 2):Device considered two-terminal device side pins shorted together, shorted together. DETECTOR side pins
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC Supply Voltage Forward Current On-State Current Operating Temperature SYMBOL Topr MIN. TYP. MAX. UNIT
2003-01-28
TLP227G(N),TLP227G-2(N)
INDIVIDUAL ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTIC Forward Voltage Reverse Current Capacitance DETECTOR Off-State Current SYMBOL IOFF TEST CONDITION VOFF MIN. TYP. 1.15 MAX. UNIT
Capacitance
COFF
COUPLED ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTIC Trigger Current Close Current On-State Resistance SYMBOL TEST CONDITION IOFF MIN. TYP. MAX. UNIT
ISOLATION CHARACTERISTICS 25°C)
CHARACTERISTIC Capacitance Input Output Isolation Resistance SYMBOL TEST CONDITION R.H. minute Isolation Voltage second oil) minute oil) MIN.
TYP.
MAX.
UNIT Vrms
2500
5000 5000
SWITCHING CHARACTERISTICS 25°C)
CHARACTERISTIC Turn-on Time Turn-off Time SYMBOL tOFF TEST CONDITION MIN. (Note TYP. MAX. UNIT
(Note SWITCHING TIME TEST CIRCUIT
TLP227G VOUT VOUT tOFF
2003-01-28
TLP227G(N),TLP227G-2(N)
RESTRICTIONS PRODUCT
020704EBC
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. Gallium (GaAs) Arsenide substance used products described this document. GaAs dust vapor harmful human body. break, cut, crushu dissolve chemically. products described this document subject foreign exchange foreign trade laws. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2003-01-28

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