TYPE IRF540 IRF540 VDSS RDS(on)

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TYPE IRF540 IRF540 VDSS RDS(on)

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N-CHANNEL 100V 0.055 TO-220 GATE CHARGE STripFETII POWER MOSFET
TYPE IRF540
IRF540
VDSS
RDS(on) <0.077
TYPICAL RDS(on) 0.055 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION
TO-220
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process specifically been designed minimize input capacitance gate charge. therefore suitable primary switch advanced highefficiency, high-frequency isolated DC-DC converters Telecom Computer applications. also intended applications with gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS MOTOR CONTROL
Ordering Information
SALES TYPE
MARKING IRF540& TO-220
PACKAGE TUBE
PACKAGING
IRF540
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR Ptot dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 0.57
22A, di/dt 300A/µs, (BR)DSS, JMAX Starting 12A,
Unit W/°C V/ns
Pulse width limited safe operating area.
February 2003
DATASHEET ACCORDING DSG/CT/1C16 MARKING: IRF540
IRF540
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 1.76 62.5 °C/W °C/W
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating 125°C Min. ±100 Typ. Max. Unit
IGSS
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions Min. Typ. 0.055 Max. 0.077 Unit
DYNAMIC
Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. Typ. Max. Unit
25V, MHz,
IRF540
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (Resistive Load, Figure VDD= VGS= Min. Typ. Max. Unit
SWITCHING
Symbol td(off) Parameter Turn-off Delay Time Fall Time Test Conditions 4.7, (Resistive Load, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. Max. Unit
di/dt 100A/µs 150°C (see test circuit, Figure
(*)Pulsed: Pulse duration duty cycle width limited safe operating area.
Safe Operating Area
Thermal Impedance
IRF540
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
IRF540
Normalized Gate Threshold Voltage Temperature Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
IRF540
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
IRF540 TO-220 MECHANICAL DATA
DIM. 2.65 15.25 6.20 3.50 3.75 MIN. 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 16.40 28.90 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409
IRF540
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TYPE IRF540 IRF540 VDSS RDS(on)

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