N-CHANNEL 600V 0.075 TO-247 MDmeshTMPower MOSFET ADVANCED DATA TY

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N-CHANNEL 600V 0.075 TO-247 MDmeshTMPower MOSFET ADVANCED DATA TY

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STW47NM60
N-CHANNEL 600V 0.075 TO-247 MDmeshTMPower MOSFET
ADVANCED DATA TYPE STW47NM60 VDSS 600V RDS(on) 0.09 Rds(on)*Qg
TYPICAL RDS(on) 0.075 HIGH dv/dt AVALANCHE CAPABILITIES 100% AVALANCHE TESTED INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE TIGHT PROCESS CONTROL HIGH MANUFACTURING YIELDS DESCRIPTION This improved version MDmeshwhich based Multiple Drain process represents benchmark high voltage MOSFETs. resulting product exhibits even lower on-resistance, impressively high dv/dt excellent avalanche characteristics. adoption Company's proprietary strip technique yields overall performances that significantly better than that similar competition's products. APPLICATIONS MDmeshfamily very suitable increasing power density high voltage converters allowing system miniaturization higher efficiencies.
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 3.33
47A, di/dt 400A/µs, V(BR)DSS, TJMAX.
Unit W/°C V/ns
width limited safe operating area
January 2003
STW47NM60
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient °C/W °C/W
Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, Min. ±100 Typ. Max. Unit
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 23.5 Min. Typ. 0.075 Max. 0.09 Unit
DYNAMIC
Symbol Ciss Coss Crss Coss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance Gate Bias Test Signal Level Open Drain Test Conditions ID(on) RDS(on)max, 23.5 MHz, Min. Typ. 3800 1250 Max. Unit
Pulsed: Pulse duration duty cycle Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
STW47NM60
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 23.5 (see test circuit, Figure Min. Typ. Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs, 25°C (see test circuit, Figure di/dt A/µs, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
STW47NM60
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STW47NM60
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 3.55 3.65 0.14 0.07 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05
DIM.
STW47NM60
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2002 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com

N-CHANNEL 600V 0.075 TO-247 MDmeshTMPower MOSFET ADVANCED DATA TY

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