N-CHANNEL 500V 0.23 TO-220/TO-247 Zener-Protected SuperMESHTMPower MOS

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N-CHANNEL 500V 0.23 TO-220/TO-247 Zener-Protected SuperMESHTMPower MOS

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STP20NK50Z STW20NK50Z
N-CHANNEL 500V 0.23 TO-220/TO-247 Zener-Protected SuperMESHTMPower MOSFET
TARGET DATA TYPE STP20NK50Z STW20NK50Z
VDSS
RDS(on) 0.27 0.27
TYPICAL RDS(on) 0.23 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
TO-220
TO-247
DESCRIPTION SuperMESHseries obtained through extreme optimization ST's well established stripbased PowerMESHlayout. addition pushing on-resistance significantly down, special care taken ensure very good dv/dt capability most demanding applications. Such series complements full range high voltage MOSFETs including revolutionary MDmeshproducts.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL OFF-LINE POWER SUPPLIES, ADAPTORS
ORDERING INFORMATION
SALES TYPE STP20NK50Z STW20NK50Z MARKING P20NK50Z W20NK50Z PACKAGE TO-220 TO-247 PACKAGING TUBE TUBE
July 2003
STP20NK50Z STW20NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT VESD(G-S) dv/dt Tstg Parameter
STP20NK50Z
Value
STW20NK50Z
Unit 1.51 W/°C V/ns
Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 1.51
4000
Pulse width limited safe operating area 20A, di/dt 200A/µs, V(BR)DSS, JMAX. Limited only maximum temperature allowed
THERMAL DATA
TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 0.66 62.5 TO-247 0.66 °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± (Open Drain) Min. Typ. Max. Unit
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
STP20NK50Z STW20NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, VGS, 250µA 10V, 3.75 0.23 Min. 0.27 Typ. Max. Unit
DYNAMIC
Symbol Ciss Coss Crss Coss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 25V, MHz, Min. Typ. 2600 Max. Unit
400V
SWITCHING
Symbol td(on) Test Conditions (Resistive Load see, Figure 400V, Min. Typ. Max. Unit
SWITCHING
Symbol td(off) tr(Voff) Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions (Resistive Load see, Figure 400V, 4.7, (Inductive Load see, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs 35V, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS.
STP20NK50Z STW20NK50Z
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP20NK50Z STW20NK50Z
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
P011C
STP20NK50Z STW20NK50Z
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 3.55 3.65 0.14 0.07 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05
DIM.
STP20NK50Z STW20NK50Z
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N-CHANNEL 500V 0.23 TO-220/TO-247 Zener-Protected SuperMESHTMPower MOS

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