13.5 7.89 0.69 High Voltage High Current Diode Pulsed Power Appli
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VRRM IPULSE VDcmax
13.5 7.89 0.69
High Voltage High Current Diode Pulsed Power Applications
5SDA 27Z1350
Doc. 5SYA 06PP-01 Oct.
Features
Multichip Design with Wafers Series Single Pulse Applications Voltage Sharing Resistors included Compact Design Glazed Ceramic Presspack Housing High Reliability
VRRM IPULSE
di/dt
Repetitive reverse blocking voltage Permanent voltage failure rate Max. voltage Max. Pulse Current Max. current rate rise Limiting load integral Forward voltage drop Threshold voltage Slope resistance Voltage sharing resistors
13.5 x106 7.89 5.13 0.69
125°C Ambient cosmic radiation level open air. 50°C Half sine wave, 50°C, 4000 wafer level
A/µs Single Pulse
Semiconductors reserves right change specifications without notice
Pulse Power Device
5SDA 27Z1350
Mechanical Data
Mounting force Pole-piece diameter Housing thickness Weight Surface creepage distance strike distance min. max.
Semiconductors
Department Pulsed Power Fabrikstrasse CH-5600 Lenzburg, Switzerland Tel.: +41-79-540-9381 Fax: +41-62 6310 E-Mail: pulsepower.abbsem@ch.abb.com Internet: www.abbsem.com
Doc. 5SYA 06PP-01 Oct.
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