13.5 13.5 High Voltage High Current Thyristor Switch Pulsed Power

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13.5 13.5 High Voltage High Current Thyristor Switch Pulsed Power

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VRRM VDRM IPULSE VDcmax
13.5 13.5
High Voltage High Current Thyristor Switch Pulsed Power Applications
5STF 07Z1350
Doc. 5SYA 02PP-01 Oct.
Features
Multichip Design with Wafers Series Single Pulse Applications Voltage Sharing possibility Free Floating Silicon Technology Glazed Ceramic Presspack Housing Compact Design High Reliability
VRRM IPULSE
di/dt
Repetitive reverse blocking voltage Permanent voltage failure rate Max. voltage Max. Pulse Current Max. current rate rise Limiting load integral Forward voltage drop Threshold voltage Slope resistance Turn-on delay time
13.5 x106 2,16 1.02 0.38
125°C Ambient cosmic radiation level open air. 50°C Half sine wave, 50°C, Wafer level 3000 Wafer level Wafer level Vdrm,
A/µs diG/dt A/µs
special Gate Drive Unit, including sharing resistors available. Datasheet 5SPY 94-04 (RAM 94-04)
Semiconductors reserves right change specifications without notice
Pulse Power Device
5STF 07Z1350
Mechanical Data
Mounting force Pole-piece diameter Housing thickness Weight Surface creepage distance strike distance min. max.
Semiconductors
Department Pulsed Power Fabrikstrasse CH-5600 Lenzburg, Switzerland Tel.: +41-79-540-9381 Fax: +41-62 6310 E-Mail: pulsepower.abbsem@ch.abb.com Internet: www.abbsem.com
Doc. 5SYA 02PP-01 Oct.

13.5 13.5 High Voltage High Current Thyristor Switch Pulsed Power

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