2800 5150 8080 0.77 0.082 5SDD 51L2800 Doc. 5SYA1103-01 Sep.

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2800 5150 8080 0.77 0.082 5SDD 51L2800 Doc. 5SYA1103-01 Sep.

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VRSM IFAVM IFRMS IFSM
2800 5150 8080 0.77 0.082
5SDD 51L2800
Doc. 5SYA1103-01 Sep.
Patented free-floating silicon technology Very on-state losses High average surge current.
Blocking
Part Number VRRM VRSM VRSM IRRM
-40°C reduces VRSM VRRM
5SDD 51L2800 2000 2800 3000
5SDD 51L2600 1850 2600 2800
5STP 51L2200 1600 2200 2400
Conditions 10ms 10ms VRRM 175°C 0-175°C
Mechanical data
nom. Mounting force min. max.
Acceleration Device unclamped Device clamped m/s2 m/s2
1.45
Pole-piece diameter Housing thickness Weight IGCT Surface creepage distance strike distance
Semiconductors reserves right change specifications without notice.
5SDD 51L2800
On-state
IFAVM IFRMS IFSM
Max. average on-state current Max. on-state current Max. peak non-repetitive surge current Limiting load integral
5150 8080 21125 20335
90°C, Half sine wave
175°C After surge: 5000 2500 7500 175°C
On-state voltage Threshold voltage Slope resistance
1.18 0.77 0.082
Switching
Recovery charge 7000 diF/dt -10A/µs IFRM 4000A -40.150 K/kW K/kW K/kW RthCH Thermal resistance case heat sink
Analytical function transient thermal impedance:
175°C
Thermal
Tjmax Tstg RthJC Max. operating junction temperature range Storage temperature range Thermal resistance junction case
Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled
K/kW K/kW
ZthJC(t) Ri(1
Ri(K/kW) i(s) 1.0231 0.5199 0.016 Fig. Transient thermal impedance junction case.
Semiconductors reserves right change specifications without notice.
Doc. 5SYA1103-01 Sep. page
5SDD 51L2800
On-state characteristic model:
ln(iT
Valid 30000 2.158 0.398 3.158 -3.626
Fig. On-state characteristics.
Fig. On-state characteristics.
Fig. On-state power losses average onstate current.
Fig. Max. permissible case temperature average on-state current.
Semiconductors reserves right change specifications without notice.
Doc. 5SYA1103-01 Sep. page
5SDD 51L2800
Fig. Surge on-state current pulse length. Half-sine wave.
Fig. Surge on-state current number pulses. Half-sine wave, 50Hz.
Semiconductors reserves right change specifications without notice.
Doc. 5SYA1103-01 Sep. page
5SDD 51L2800
Fig. Recovery charge decay rate onstate current.
Fig. Outline drawing. dimensions millimeters represent nominal values unless stated otherwise.
Semiconductors reserves right change specifications without notice.
Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)62 6419 (0)62 6306 abbsem@ch.abb.com www.abbsem.com
Doc. 5SYA1103-01 Sep.

2800 5150 8080 0.77 0.082 5SDD 51L2800 Doc. 5SYA1103-01 Sep.

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