3000 1070 1680 0.80 0.300 5SDD 11D2800 Target specification

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3000 1070 1680 0.80 0.300 5SDD 11D2800 Target specification

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VRSM IFAVM IFRMS IFSM
3000 1070 1680 0.80 0.300
5SDD 11D2800
Target specification
Doc. 5SYA1166-00 Sep.
Very on-state losses Optimum power handling capability
Blocking
Part Number VRRM VRSM IRRM 5SDD 11D2800 2800 3000 5SDD 20F2600 2600 2800 5SDD 20F2200 2200 2400 Conditions 10ms 0-160°C 10ms VRRM 160°C
Mechanical data
nom. Mounting force min. max.
Acceleration Device unclamped Device clamped m/s2 m/s2
Pole-piece diameter Housing thickness Weight IGCT Surface creepage distance strike distance
Semiconductors reserves right change specifications without notice.
5SDD 11D2800
On-state
IFAVM IFRMS IFSM
Max. average on-state current Max. on-state current Max. peak non-repetitive surge current Limiting load integral
1070 1680 14.8
90°C, Half sine wave
160°C After surge: 1500 1500 160°C
On-state voltage Threshold voltage Slope resistance
1.25 0.80 0.300
Switching
Recovery charge diF/dt -30A/µs IFRM 160°C
Semiconductors reserves right change specifications without notice.
Doc. 5SYA1166-00 Sep. page
5SDD 11D2800
Fig. Outline drawing. dimensions millimeters represent nominal values unless stated otherwise.
Semiconductors reserves right change specifications without notice.
Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)62 6419 (0)62 6306 abbsem@ch.abb.com www.abbsem.com
Doc. 5SYA1166-00 Sep.

3000 1070 1680 0.80 0.300 5SDD 11D2800 Target specification

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