2800 2625 4120 43000 0.85 0.160 Phase Control Thyristor 5STP

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2800 2625 4120 43000 0.85 0.160 Phase Control Thyristor 5STP

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2800 2625 4120 43000 0.85 0.160
Phase Control Thyristor
5STP 24H2800
Doc. 5SYA1047-02 Sep.
Patented free-floating silicon technology on-state switching losses Designed traction, energy industrial applications Optimum power handling capability Interdigitated amplifying gate
Blocking
Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 24H2800 5STP 24H2600 5STP 24H2200 Conditions 2800 3000 2600 2800 1000 V/µs 2200 2400 10ms 5ms, single pulse VDRM VRRM 125°C
Exp. 0.67 VDRM, 125°C
Mechanical data
Mounting force nom. min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance strike distance m/s2 m/s2
Semiconductors reserves right change specifications without notice.
5STP 24H2800
On-state
ITAVM ITRMS ITSM
Max. average on-state current Max. on-state current Max. peak non-repetitive surge current Limiting load integral
2625 4120 43000 46000
Half sine wave, 70°C 3000 125°C 125°C After surge:
9245 8781
On-state voltage Threshold voltage Slope resistance Holding current
1.35 0.85 0.160 25-75 15-60
1500 4500 25°C 125°C 25°C 125°C
Latching current
150- 50-200
Switching
di/dtcrit Critical rate rise on-state current A/µs A/µs Cont. 0.67VDRM 125°C sec. 50Hz 0.4VDRM ITRM 3000
Delay time Turn-off time
0.67VDRM ITRM 3000 125°C dvD/dt 20V/µs diT/dt A/µs
Recovery charge
4000 7000
Triggering
VFGM IFGM VRGM Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss =0.4 VDRM VDRM
Semiconductors reserves right change specifications without notice.
Doc. 5SYA1047-02 Sep. page
5STP 24H2800
Thermal
Tjmax Tstg RthJC Max. operating junction temperature range Storage temperature range Thermal resistance junction case -40.140 K/kW K/kW K/kW RthCH Thermal resistance case heat sink
Analytical function transient thermal impedance:
Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled
K/kW K/kW
ZthJC [K/kW] 180° sine: K/kW 180° rectangular: K/kW 120° rectangular: K/kW rectangular: K/kW
ZthJC(t) Ri(1
Ri(K/kW) i(s) 6.52 0.4562 1.55 0.0792 1.67 0.0088
45.60 Double-side cooling 0.001
0.49 0.0037
0.010
0.100
1.000
10.000
Fig. Transient thermal impedance junction case.
Fig. On-state characteristics.
Fig. On-state characteristics. Tj=125°C, 10ms half sine
Semiconductors reserves right change specifications without notice.
Doc. 5SYA1047-02 Sep. page
5STP 24H2800
Fig. On-state power dissipation mean onstate current. Turn losses excluded.
Fig. Max. permissible case temperature mean on-state current.
Fig. Surge on-state current pulse length. Half-sine wave.
Fig. Surge on-state current number pulses. Half-sine wave, 50Hz.
Semiconductors reserves right change specifications without notice.
Doc. 5SYA1047-02 Sep. page
5STP 24H2800
Fig. Gate trigger characteristics.
Fig. Max. peak gate power loss.
Fig. Recovery charge decay rate onstate current.
Fig. Peak reverse recovery current decay rate on-state current.
Semiconductors reserves right change specifications without notice.
Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)62 6419 (0)62 6306 abbsem@ch.abb.com www.abbsem.com
Doc. 5SYA1047-02 Sep.

2800 2625 4120 43000 0.85 0.160 Phase Control Thyristor 5STP

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