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LT1001 Precision Operational Amplifier DESCRIPTIO

, LTC and LT are registered trademarks of Linear Technology Corporation.

FEATURES
LT1001 Precision Operational Amplifier DESCRIPTIO
The LT ®1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire distribution of several key parameters. Consequently, the specifications of the lowest cost, commercial temperature device, the LT1001C, have been dramatically improved when compared to equivalent grades of competing precision amplifiers. Essentially, the input offset voltage of all units is less than 50µV (see distribution plot below). This allows the LT1001AM / 883 to be specified at 15µV. Input bias and offset currents, common-mode and power supply rejection of the LT1001C offer guaranteed performance which were previously attainable only with expensive, selected grades of other devices. Power dissipation is nearly halved compared to the most popular precision op amps, without adversely affecting noise or speed performance. A beneficial by-product of lower dissipation is decreased warm-up drift. Output drive capability of the LT1001 is also enhanced with voltage gain guaranteed at 10mA of load current. For similar performance in a dual precision op amp, with guaranteed matching specifications, see the LT1002. Shown below is a platinum resistance thermometer application.
, LTC and LT are registered trademarks of Linear Technology Corporation.
Guaranteed Low Offset Voltage LT1001AM 15µV max LT1001C 60µV max Guaranteed Low Drift LT1001AM 0.6µV / °C max LT1001C 1.0µV / °C max Guaranteed Low Bias Current LT1001AM 2nA max LT1001C 4nA max Guaranteed CMRR LT1001AM 114dB min LT1001C 110dB min Guaranteed PSRR LT1001AM 110dB min LT1001C 106dB min Low Power Dissipation LT1001AM 75mW max LT1001C 80mW max Low Noise 0.3µVP-P
APPLICATIO S
Thermocouple amplifiers Strain gauge amplifiers Low level signal processing High accuracy data acquisition
TYPICAL APPLICATIO
1MEG. 330k 20k
GAIN TRIM
NUMBER OF UNITS
LT1001 6 10k 3 2
LM129
20k OFFSET TRIM
0 -60 -40 0 20 40 -20 INPUT OFFSET VOLTAGE (µV) 60
1001 TA02
1001 TA01
954 UNITS FROM THREE RUNS
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LT1001
ABSOLUTE MAXIMUM RATINGS
(Note 1)
PACKAGE / ORDER INFORMATION
ORDER PART NUMBER
TOP VIEW OFFSET ADJUST 8 1 -IN 2 3 +IN 4 - + 5 NC 7 V+ 6 OUT TOP VIEW VOS TRIM 1 -IN 2 +IN 3 V- 4 N8 PACKAGE 8 PIN PLASTIC DIP - + VOS 8 TRIM 7 V+ 6 OUT 5 NC S8 PACKAGE 8 PIN PLASTIC SO
LT1001AMH / 883 LT1001MH LT1001ACH LT1001CH
V- (CASE) H PACKAGE METAL CAN
OBSOLETE PACKAGE
Consider the N8 and S8 Packages for Alternate Source
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER VOS VOS Time IOS Ib en en AVOL CMRR PSRR Rin Input Offset Voltage Long Term Input Offset Voltage Stability Input Offset Current Input Bias Current Input Noise Voltage Input Noise Voltage Density Large Signal Voltage Gain Common Mode Rejection Ratio Power Supply Rejection Ratio Input Resistance Differential Mode
CONDITIONS LT1001AM / 883 Note 2 LT1001AC Notes 3 and 4
Operating Temperature Range LT1001AM / LT1001M (OBSOLETE) . - 55°C to 150°C LT1001AC / LT1001C ............... 0°C to 125°C Storage: All Devices............. - 65°C to 150°C Lead Temperature (Soldering, 10 sec.)......... 300°C
ORDER PART NUMBER LT1001ACN8 LT1001CN8 LT1001CS8 S8 PART MARKING 1001 ORDER PART NUMBER LT1001AMJ8 / 883 LT1001MJ8 LT1001ACJ8 LT1001CJ8
OBSOLETE PACKAGE
Consider the N8 and S8 Packages for Alternate Source
UNITS µV µV / month nA nA µVp-p nVHz nVHz V / mV V / mV dB dB M
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LT1001
ELECTRICAL CHARACTERISTICS
CONDITIONS RL 2k RL 1k
SYMBOL PARAMETER Input Voltage Range VOUT SR GBW Pd Maximum Output Voltage Swing Slew Rate Gain-Bandwidth Product Power Dissipation
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Offset voltage for the LT1001AM / 883 and LT1001AC are measured after power is applied and the device is fully warmed up. All other grades are measured with high speed test equipment, approximately 1 second after power is applied. The LT1001AM / 883 receives 168 hr. burn-in at 125°C. or equivalent. Note 3: This parameter is tested on a sample basis only.
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LT1001 TYPICAL PERFORMANCE CHARACTERISTICS
Typical Distribution of Offset Voltage Drift with Temperature
100 265 UNITS TESTED
CHANGE IN OFFSET VOLTAGE (µV)
OFFSET VOLTAGE (µV)
NUMBER OF UNITS
-0.6 -0.2 0 +0.2 +0.6 +1.0 OFFSET VOLTAGE DRIFT (µV / °C)
1001 G01
0.1Hz to 10Hz Noise
OFFSET VOLTAGE CHANGE (µV)
NOISE VOLTAGE 100nV / DIV
VOLTAGE NOISE nV / Hz
1 / f CORNER 4Hz VOLTAGE
CURRENT NOISE pA / Hz
6 4 TIME (SECONDS)
Input Bias and Offset Current vs Temperature
INPUT BIAS AND OFFSET CURRENTS (nA)
1.0 0.8 0.6 BIAS CURRENT 0.4 0.2
INPUT BIAS CURRENT (nA)
INVERTING OR NON-INVERTING INPUT BIAS CURRENT (mA)
OFFSET CURRENT 50 25 75 0 TEMPERATURE (°C) 100 125
1001 G04
Offset Voltage Drift withTemperature of Representative Units
Warm-Up Drift
LT1001A
3 METAL CAN (H) PACKAGE 2 DUAL-IN-LINE PACKAGE PLASTIC (N) OR CERDIP (J)
1 3 4 2 TIME AFTER POWER ON (MINUTES)
1001 G02
1001 G03
Noise Spectrum
Long Term Stability of Four Representative Units
1 / f CORNER 70Hz CURRENT
1 1 10 100 FREQUENCY (Hz)
1001 G05
3 2 TIME (MONTHS)
1001 G06
Input Bias Current Over the Common Mode Range
Input Bias Current vs Differential Input Voltage
1001 G09
1001 G07
1001 G08
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LT1001 TYPICAL PERFORMANCE CHARACTERISTICS
Open Loop Voltage Gain vs Temperature
OPEN LOOP VOLTAGE GAIN (V / V)
OPEN LOOP VOLTAGE GAIN (dB)
VOLTAGE GAIN (dB)
1001 G12
50 25 75 0 TEMPERATURE (°C)
100 1k 10k 100k 1M 10M FREQUENCY (Hz)
1001 G11
1001 G10
Common Mode Limit vs Temperature
V+ -0.2 -0.4 -0.6 -0.8 -1.0
Common Mode Rejection Ratio vs Frequency
COMMON MODE REJECTION (dB) 140
Power Supply Rejection Ratio vs Frequency
POWER SUPPLY REJECTION (dB)
COMMON MODE LIMIT (V) REFERRED TO POWER SUPPLY
+1.0 +0.8 +0.6 +0.4 +0.2 V- -50 -25
50 25 75 TEMPERATURE °C
100 1k 10k FREQUENCY (Hz)
10 100 1k FREQUENCY (Hz)
1001 G13
1001 G14
1001 G15
Supply Current vs Supply Voltage
Output Swing vs Load Resistance
50 SHORT CIRCUIT CURRENT (mA) SOURCING SINKING 40 30 20 10 -10 -20 -30 -40 -50
Output Short-Circuit Current vs Time
NEGATIVE SWING
-55°C
SUPPLY CURRENT (mA)
1.5 125°C 1.0
OUTPUT SWING (V)
POSITIVE SWING
1001 G16
300 1000 3k LOAD RESISTANCE ()
1001 G17
1 3 4 2 TIME FROM OPUTPUT SHORT (MINUTES)
1001 G18
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PHASE SHIFT (DEG)
Open Loop Voltage Gain Frequency Response
Gain, Phase Shift vs Frequency
80 PHASE 25°C 100 120
LT1001 TYPICAL PERFORMANCE CHARACTERISTICS
Small Signal Transient Response
PERCENT OVERSHOOT
1001 G19
Large Signal Transient Response
28 OUTPUT VOLTAGE, PEAK-TO-PEAK (V) 24 20 16 12 8 4 0
OUTPUT IMPEDANCE ()
APPLICATIONS INFORMATION
1001 G22
Voltage Follower Overshoot vs Capacitive Load
Small Signal Transient Response
10, 000 1000 CAPACITIVE LOAD (pF)
1001 G20
1001 G21
Maximum Undistorted Output vs. Frequency
Closed Loop Output Impedance
1001 G24
10 100 FREQUENCY (kHz)
1001 G23
Unless proper care is exercised, thermocouple effects caused by temperature gradients across dissimilar metals at the contacts to the input terminals, can exceed the inherent drift of the amplifier. Air currents over device leads should be minimized, package leads should be short, and the two input leads should be as close together as possible and maintained at the same temperature.
Test Circuit for Offset Voltage and its Drift with Temperature
1001 F01
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LT1001
APPLICATIONS INFORMATION
Offset Voltage Adjustment The input offset voltage of the LT1001, and its drift with temperature, are permanently trimmed at wafer test to a low level. However, if further adjustment of Vos is necessary, nulling with a 10k or 20k potentiometer will not degrade drift with temperature. Trimming to a value other than zero creates a drift of (Vos / 300)µV / °C, e.g., if Vos is
Improved Sensitivity Adjustment
7.5k 8 LT1001 7 6 OUTPUT
INPUT
2.2µF TANTALUM
3.9k 1N914 0.01µF 300 0.1µF 200 2N5160 2N3866 33 1k 1.8k 2N4440
RIN 1k INPUT
10k 15pF
4 -15V
1001 F02
The device under test should be warmed up for three minutes and shielded from air currents.
DC Stabilized 1000v / µsec Op Amp
2N5486
200pF 22µF TANTALUM
-15V 3
LT1001 6 0.001µF
30k 470
390 2N3904
22 2N5160 0.01µF 2N3866 200pF 3.9k 15-60pF TUSONIX # 519-3188 200 1N914 300 0.1µF -15V
1001 F04
FULL POWER BANDWIDTH 8MHz
0.1Hz to 10Hz Noise Test Circuit
0.1µF
2k LT1001 4.7 µF
LT1001
DEVICE UNDER TEST
100k 24.3k 0.1 µF 2.2µF
1001 F03
2N3904 0.5 OUTPUT 0.5 2N3906
2N4440 22µF TANTALUM 1.2k
ADJUST FOR BEST SQUARE WAVE AT OUTPUT
1001fb
LT1001
TYPICAL APPLICATIONS
Microvolt Comparator with TTL Output
LT1001
-5V POSITIVE FEEDBACK TO ONE OF THE NULLING TERMINALS CREATES 5µ TO 20µV OF HYSTERESIS. INPUT OFFSET VOLTAGE IS TYPICALLY CHANGED BY LESS THAN 5µV DUE TO THE FEEDBACK.
Precision Current Source
5k 5V 3 5k R C RC 10 -4 6 2N3685 2N2219 10k VIN 0 to (V + - 1V) 2 3
7 LT1001
4 1000pF
15V 15V 8.2k 2k 3 4.99k 100 LT1001 2 6 2k 2N2219 IN4148 REFERENCE OUT TO MONITORING A / D CONVERTER
LM329
350 BRIDGE 301k 10k ZERO
LT1001 6
Photodiode Amplifier
100pF
LT1001 6 OUTPUT 1V / µA
2N3904 IN914
1001 TA03
1001 TA04
Precision Current Sink
7 LT1001 4 -5V
1001 TA05 1001 TA06
Strain Gauge Signal Conditioner with Bridge Excitation
LT1001 6 0V TO 10V OUT 340k
IN4148 2N2907 2k 100 5W -15V RN60C FILM RESISTORS
1.1k GAIN TRIM
1001 TA07
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LT1001
TYPICAL APPLICATIONS
12V TO 18V 2 RS 0k TO 10k 7 LT1001 3 6 OUTPUT -10V TO 10V
INPUT -10V TO 10V
1001 TA08
-12V TO -18V
The voltage follower is an ideal example illustrating the overall excellence of the LT1001. The contributing error terms are due to offset voltage, input bias current, voltage gain, common mode and power-supply
BATTERY
CIRCUIT USES TEMPERATURE DIFFERENCE BETWEEN BATTERY PACK MOUNTED THERMOCOUPLE AND AMBIENT THERMOCOUPLE TO SET BATTERY CHARGE CURRENT. PEAK CHARGING CURRENT IS 1 AMP.
INPUT -10V TO 10V
rejections. Worst-case summation of guaranteed specifications is tabulated below.
OUTPUT ACCURACY
Thermally Controlled NiCad Charger
10V, 1.2A HR NICAD STACK
0.1µF
AMBIENT 620k
LT1001
IN4001 6 2k
4 -15V 43k IN4148
2N6387
10 1µF SINGLE POINT GROUND THERMOCOUPLES ARE 40µV / °C CHROMEL-ALUMEL (TYPE K)
0.6 5W
1001 TA09
Precision Absolute Value Circuit
1001 TA10
LT1001 6 OUTPUT 0V TO 10V
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LT1001
TYPICAL APPLICATIONS
Precision Power Supply with Two Outputs (1) 0V to 10V in 100µV STEPS (2) 0V to 100V in 1mV STEPS
LM399
KVD 00000 - 99999 + 1 -15V KELVIN-VARLEY DIVIDER ESI#DP311
JULIE RSCH. LABS #R-44 25k 680pF 2
LT301A 6 33k
33k 15V
33k 1.8k 15V 5k
BIPOLAR SYMMETRY IS EXCELLENT BECAUSE ONE DEVICE, Q2, SETS BOTH LIMITS
1001 TA12
LM301A
3 100k
LM301A 6
4µF 90k
OUTPUT 2 0V-100V, 25mA
0.1µF
2.2µF D CLK Q Q 22µF 2N6533 2k
10k (SELECT) TRIM-100V 100 2
6 IN914 LT1001
15 15V 2N2907
74C74
CLAMP SET
IN914
1001 TA11
Dead Zone Generator
VSET DEAD ZONE CONTROL INPUT 0V TO 5V 47pF 2k
LT1001 6
10k 10k 2
LT1001 6 VOUT
IN914
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LT1001
TYPICAL APPLICATIONS
S1 INPUT 1µF
(ACQUIRE) 01 OUT 74C906 IN IN OUT
(READ) 02 A
74C04
74C86
2 CLK 6 LM301A
1) ALL DIODES IN4148 2) S1-S4 OPTO MOS SWITCH OFM-1A, THETA-J CORP. 3) FILM RESISTOR 4) POLYPROPYLENE CAPACITORS 5) ADJUST R1 for 93 Hz AT TEST POINT A
LT1001 6 OUTPUT
0.1µF
S3 0.2µF 909
200 GAIN TRIM
10k 1k
2 5.6k R1 0.1µF
LM329 A FLYING CAPACITOR CHARGED BY CLOCKED PHOTO DRIVEN FET SWITCHES CONVERTS A DIFFERENTIAL SIGNAL AT A HIGH COMMON MODE VOLTAGE TO A SINGLE ENDED SIGNAL AT THE LT1001 OUTPUT.
1001 TA13
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LT1001
SCHE ATIC DIAGRA
V+ 7 6k 1 40k 8 40k 6k Q27 Q28 Q29 Q24 Q25
Q6 Q8 Q4 55pF 3k Q31 20pF Q33 20
Q10 500 T1 2k 180 Q9 V- 4 Q19 Q20 Q17 Q15
Q11 Q13 Q14 Q12 1.5k 25k 30pF 3k Q21 Q16 Q34 Q26 OUT 6 20 Q22 2k Q18 Q23 Q32 Q30 8k 120 240
1001 SS
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LT1001
PACKAGE DESCRIPTION
0.040 (1.016) MAX
SEATING PLANE 0.010 - 0.045 (0.254 - 1.143) 0.016 - 0.021 (0.406 - 0.533)
45°TYP 0.028 - 0.034 (0.711 - 0.864)
0.110 - 0.160 (2.794 - 4.064) INSULATING STANDOFF
H Package 8-Lead TO-5 Metal Can (.200 Inch PCD)
(Reference LTC DWG # 05-08-1320)
0.335 - 0.370 (8.509 - 9.398) DIA 0.305 - 0.335 (7.747 - 8.509) 0.050 (1.270) MAX GAUGE PLANE 0.165 - 0.185 (4.191 - 4.699) REFERENCE PLANE 0.500 - 0.750 (12.700 - 19.050)
0.027 - 0.045 (0.686 - 1.143) PIN 1
0.200 (5.080) TYP
LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE AND 0.045" BELOW THE REFERENCE PLANE 0.016 - 0.024 FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS (0.406 - 0.610)
H8(TO-5) 0.200 PCD 1197
OBSOLETE PACKAGE
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LT1001
PACKAGE DESCRIPTION
CORNER LEADS OPTION (4 PLCS)
0.045 - 0.068 (1.143 - 1.727) FULL LEAD OPTION 0.300 BSC (0.762 BSC)
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP / PLATE OR TIN PLATE LEADS
J8 Package 8-Lead CERDIP (Narrow .300 Inch, Hermetic)
(Reference LTC DWG # 05-08-1110)
0.005 (0.127) MIN
0.405 (10.287) MAX 8 7 6 5
0.023 - 0.045 (0.584 - 1.143) HALF LEAD OPTION
0.025 (0.635) RAD TYP 1 2 3
0.200 (5.080) MAX 0.015 - 0.060 (0.381 - 1.524)
0.045 - 0.065 (1.143 - 1.651) 0.014 - 0.026 (0.360 - 0.660) 0.100 (2.54) BSC
0.125 3.175 MIN
J8 1298
OBSOLETE PACKAGE
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LT1001
PACKAGE DESCRIPTION
THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
N8 Package 8-Lead PDIP (Narrow .300 Inch)
(Reference LTC DWG # 05-08-1510)
0.400 (10.160) MAX 8 7 6 5
N8 1098
0.100 (2.54) BSC
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LT1001
PACKAGE DESCRIPTION
0.014 - 0.019 (0.355 - 0.483) TYP DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 q FAX: (408) 434-0507
S8 Package 8-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610)
SO8 1298
0.050 (1.270) BSC
1001fb LT / CPI 0102 1.5K REV B · PRINTED IN USA
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