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TO-92 High speed power switching Features on-resistance
Top Searches for this datasheet2SK975 TO-92 High speed power switching Features on-resistance High speed switching drive current gate drive device driven from source Suitable motor drive, DC-DC converter, power switch solenoid drive Source Drain TO-92MOD Gate Table Absolute Maximum Ratings 25°C) Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)* Tstg Ratings +150 Unit duty cycle 2SK975 Table Electrical Characteristics 25°C) Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(off) Unit Test conditions ±100 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Pulse Test |yfs| Ciss Coss Crss td(on) td(off) 0.55 diF/dt A/µs 2SK975 Power Temperature Derating Channel Dissipation Maximum Safe Operation Area Drain Current Operation this area limited (on) 0.03 25°C Case Temperature (°C) 0.01 Drain Source Voltage Typical Output Characteristics Pulse Test Drain Current Typical Transfer Characteristics Drain Current Pulse Test 75°C -25°C 25°C Drain Source Voltage Gate Source Voltage 2SK975 Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance (on) Drain Source Saturation Voltage (on) Pulse Test Static Drain Source State Resistance Drain Current Pulse Test 0.05 0.05 Gate Source Voltage Drain Current Static Drain Source State Resistance Temperature Static Drain Source State Resistance (on) Forward Transfer Admittance Pulse Test Forward Transfer Admittance Drain Current -25°C Pulse Test 25°C 75°C 0.05 0.05 Case Temperature (°C) Drain Current 2SK975 Body Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time (ns) di/dt A/µs, 25°C Pulse Test Capacitance (pF) 1000 Typical Capacitance Drain Source Voltage Ciss Crss Coss 0.05 Reverse Drain Current Drain Source Voltage Dynamic Input Characteristics Drain Source Voltage Gate Source Voltage Switching Characteristics (off) Switching Time (ns) (on) 0.05 duty Gate Charge (nc) Drain Current 2SK975 Reverse Drain Current Source Drain Voltage Pulse Test Reverse Drain Current Source Drain Voltage Other recent searchesXLM2ACR08W - XLM2ACR08W XLM2ACR08W Datasheet Si4835DDY - Si4835DDY Si4835DDY Datasheet Si4835BDY - Si4835BDY Si4835BDY Datasheet FEP30AP - FEP30AP FEP30AP Datasheet FEP30JP - FEP30JP FEP30JP Datasheet EQM08-5GC-T030881-00 - EQM08-5GC-T030881-00 EQM08-5GC-T030881-00 Datasheet CVCO55CC-3901-4101 - CVCO55CC-3901-4101 CVCO55CC-3901-4101 Datasheet AZ900 - AZ900 AZ900 Datasheet AD9780 - AD9780 AD9780 Datasheet AD9781 - AD9781 AD9781 Datasheet AD9783 - AD9783 AD9783 Datasheet
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