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TO-220AB High speed power switching Features on-resista


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2SK972
TO-220AB
High speed power switching
Features
on-resistance High speed switching drive current gate drive device driven from source Suitable motor drive, DC-DC converter, power switch solenoid drive
Gate Drain (Flange) Source
Table Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)* Pch** Tstg Ratings +150 Unit
duty cycle Value
2SK972
Table Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Unit Test conditions ±100
0.033 0.05 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Pulse Test |yfs| Ciss Coss Crss td(on) td(off) 1400 0.04 0.06 diF/dt A/µs
2SK972
Power Temperature Derating Channel Dissipation
Maximum Safe Operation Area
Drain Current
25°C
Case Temperature (°C)
Drain Source Voltage
Typical Output Characteristics Drain Current Pulse Test Drain Source Voltage
Typical Transfer Characteristics 75°C Pulse Test 25°C -25°C
Drain Current
Gate Source Voltage
2SK972
Drain Source Saturation Voltage Gate Source Voltage Drain Source Saturation Voltage (on) Static Drain Source Static Resistance (on) Pulse Test
Static Drain Source State Resistance Drain Current Pulse Test 0.05
0.02 0.01 0.005 Drain Current
Gate Source Voltage
Static Drain Source State Resistance Temperature Static Drain Source State Resistance (on) Pulse Test 0.08 0.04 0.02 Forward Transfer Admittance 0.10
Forward Transfer Admittance Drain Current Pulse Test
-25°C 25°C
0.06
75°C
Case Temperature (°C)
Drain Current
2SK972
Body Diode Reverse Recovery Time 1,000 Reverse Recovery Time (ns) di/dt A/µs, 25°C Pulse Test Capacitance (pF) 10,000 3,000
Typical Capacitance Drain Source Voltage Ciss 1,000 Coss Crss
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics Drain Source Voltage Gate Source Voltage 1000 Switching Time (ns)
Switching Characteristics
(off)
2µs, duty (on) Drain Current
Gate Charge (nc)
2SK972
Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test
Source Drain Voltage
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width 25°C
0.03 0.01
0.05 0.02
ch-c(t) ch-c ch-c 2.5°C/W, 25°C
Pulse Width
100µ
2SK972
Switching Time Test Circuit Monitor
Wavewforms Vout Monitor
D.U.T
Vout
(off)
(on)

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