2SK3296 DESCRIPTION 2SK3296 N-Channel device that features o

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FIELD EFFECT TRANSISTOR
2SK3296
DESCRIPTION
2SK3296 N-Channel device that features on-state resistance excellent switching characteristics, designed voltage high current applications such DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3296 2SK3296-S 2SK3296-ZK PACKAGE TO-220AB TO-262 TO-263(MP-25ZK) TO-263(MP-25ZJ)
FEATURES
drive available on-state resistance RDS(on)1 MAX. (VGS gate charge TYP. Built-in gate protection diode Surface mount device available
2SK3296-ZJ
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (Pulse)
Note
VDSS VGSS ID(DC) ID(pulse) Tstg
±140 +150
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Note Duty Cycle
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14063EJ1V0DS00 (1st edition) Date Published October 2000 CP(K) Printed Japan
mark shows major revised points.
1999, 2000
2SK3296
ELECTRICAL CHARACTERISTICS(TA 25°C)
CHARACTERISTICS Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs TEST CONDITIONS VGS(on) 1300 1220 MIN. TYP. MAX. UNIT
TEST CIRCUIT SWITCHING TIME
TEST CIRCUIT GATE CHARGE
D.U.T.
D.U.T. Duty Cycle
Wave Form
Wave Form
VGS(on)
td(on)
td(off) toff
Data Sheet D14063EJ1V0DS00
2SK3296
TYPICAL CHARACTERISTICS 25°C)
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Drain Current
1000
FORWARD TRANSFER CHARACTERISTICS
Pulsed
Drain Current
-50°C -25°C 25°C 75°C 125°C 150°C
0.01
0.001
Pulsed
Drain Source Voltage
Gate Source Voltage
VGS(off) Gate Source Cut-off Voltage
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
-50°C -25°C 25°C 75°C 150°C
Pulsed
Channel Temperature
Drain Current
RDS(on) Drain Source On-state Resistance
Pulsed
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed
1000
Gate Source Voltage
Drain Current
Data Sheet D14063EJ1V0DS00
2SK3296
RDS(on) Drain Source On-state Resistance
Diode Forward Current
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE Pulsed
SOURCE DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed
0.01
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
Ciss, Coss, Crss Capacitance td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS 10000
1000
1000
Ciss
td(off)
Coss Crss
td(on)
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DIODE FORWARD CURRENT 1000
Reverse Recovery Time Drain Source Voltage
di/dt A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Gate Source Voltage
Diode Forward Current
Gate Charge
Data Sheet D14063EJ1V0DS00
2SK3296
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Channel Temperature
Case Temperature
FORWARD BIAS SAFE OPERATING AREA 1000
Drain Current
ID(DC)
ID(pulse)
25°C Single Pulse
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 83.3°C/W
Rth(ch-C) 3.13°C/W
Single Pulse 0.01 1000
Pulse Width
Data Sheet D14063EJ1V0DS00
2SK3296
PACKAGE DRAWINGS (Unit
1)TO-220AB (MP-25)
3.0±0.3
2)TO-262
1.0±0.5
10.6 MAX. 10.0
MAX.
MAX. 1.3±0.2
3.6±0.2
MIN.
(10) 1.3±0.2
15.5 MAX.
MAX.
1.3±0.2
12.7 MIN.
1.3±0.2
12.7 MIN.
8.5±0.2
0.75±0.3 2.54 TYP. 0.5±0.2 2.8±0.2
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
0.75±0.1 2.54 TYP.
2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
3)TO-263 (MP-25ZK)
10.0±0.2 plating TYP.
1.35±0.3
4)TO-263 (MP-25ZJ)
4.45±0.2 1.3±0.2
(10)
1.0±0.5 8.5±0.2
MAX. 1.3±0.2
TYP.
9.15±0.2
15.25±0.5
0.025 0.25
5.7±0.4
2.45±0.25
1.4±0.2 0.7±0.2 2.54 TYP.
0.5±
0.7±0.15 2.54
2.54 TYP.
0.5±0.2
0.25 1.Gate 2.Drain 3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Remark
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
Gate
Body Diode
Gate Protection Diode
Source
Data Sheet D14063EJ1V0DS00
2.8±0.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
2SK3296
[MEMO]
Data Sheet D14063EJ1V0DS00
2SK3296
information this document current October, 2000. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

2SK3296 DESCRIPTION 2SK3296 N-Channel device that features o

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