SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switchin
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2SD1650
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching transistors plastic envelope with integrated efficiency diode, primarily horizontal deflection circuites colour television receivers
QUICK REFERENCE DATA
SYMBOL
TO-3PML
CONDITIONS
VCESM VCEO Ptot VCEsat Icsat
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
2.0A; 0.4A 16KHz 2.0A IC=2A,IB1=-IB2=0.4A,VCC=140V
1500
UNIT
LIMITING VALUES
SYMBOL
VCESM VCEO Ptot Tstg
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature
CONDITIONS
1500
UNIT
ELECTRICAL CHARACTERISTICS
SYMBOL
ICES VCEOsust VCEsat VBEsat
PARAMETER Collector cut-off current
Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage current gain Diode forward voltage Transition frequency 1MHz Collector capacitance 1MHz
Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time
CONDITIONS VCESMmax VCESMmax 100mA 25mH 2.0A; 0.4A 2.0A; 0.4A 2.0A 0.1A; IC=2A,IB1=-IB2=0.4A,VCC=140V
IC=2A,IB1=-IB2=0.4A,VCC=140V
UNIT
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: ic@wingshing.com
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