2N5884 2N5886 Preferred Devices Complementary Silicon High-Power

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2N5884 2N5886 Preferred Devices Complementary Silicon High-Power

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2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2N5884 2N5886 Preferred Devices
Complementary Silicon High-Power Transistors
Complementary silicon high-power transistors designed general-purpose power amplifier switching applications.
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Collector-Emitter Saturation Voltage
VCE(sat) Vdc, (max) Leakage Current ICEX mAdc (max) Rated Voltage Excellent Current Gain (min) High Current Gain Bandwidth Product (min) Pb-Free Packages Available*
AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS, WATTS
MAXIMUM RATINGS (Note
Rating
TO-204AA (TO-3) CASE 1-07 STYLE
Symbol VCEO Value Unit Collector-Emitter Voltage 2N5883, 2N5885 2N5884, 2N5886 Collector-Base Voltage 2N5883, 2N5885 2N5884, 2N5886 Emitter-Base Voltage Collector Current Continuous Peak Base Current Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range 1.15 W/°C Tstg
MARKING DIAGRAM
2N588xG AYYWW
2N588x
THERMAL CHARACTERISTICS
Characteristic
Symbol
Unit
Device Code Pb-Free Package Assembly Location Year Work Week Country Origin
Thermal Resistance, Junction-to-Case
0.875
°C/W
Stresses exceeding Maximum Ratings damage device. Maximum Ratings stress ratings only. Functional operation above Recommended Operating Conditions implied. Extended exposure stresses above Recommended Operating Conditions affect device reliability. Indicates JEDEC registered data. Units conditions differ some parameters re-registration reflecting these changes been requested. above values most exceed present JEDEC registered data.
ORDERING INFORMATION
detailed ordering shipping information package dimensions section page this data sheet. Preferred devices recommended choices future best overall value.
*For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev.
Publication Order Number: 2N5883/D
POWER DISSIPATION (WATTS)
Indicates JEDEC Registered Data. Pulse Test: Pulse Width Duty Cycle 2.0%. |hfe| ftest. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Note 25°C unless otherwise noted)
Fall Time
Storage Time
Rise Time
Small-Signal Current Gain Adc, Vdc, ftest kHz)
Output Capacitance (VCB Vdc, MHz)
Current-Gain Bandwidth Product (Note
Base-Emitter Voltage (Note
Base-Emitter Saturation Voltage (Note
Collector-Emitter Saturation Voltage (Note Adc, Adc) Adc, 6.25 Adc)
Current Gain (Note Adc, Vdc) Adc, Vdc) Adc, Vdc)
Emitter Cutoff Current (VEB Vdc,
Collector Cutoff Current (VCB Vdc, (VCB Vdc,
Collector Cutoff Current (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc, 150°C) (VCE Vdc, VBE(off) Vdc, 150°C)
Collector Cutoff Current (VCE Vdc, (VCE Vdc,
Collector-Emitter Sustaining Voltage (Note mAdc,
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
Adc, Vdc)
Characteristic
(VCC Vdc, Adc, Adc)
Adc, 6.25 Adc)
Adc, Vdc, ftest MHz)
CASE TEMPERATURE (°C)
Figure Power Derating
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2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5884 2N5885, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5984, 2N5886 2N5883, 2N5885 2N5884, 2N5886 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX 1000 mAdc mAdc mAdc mAdc Unit
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
SCOPE
TURN-ON TIME
+2.0 TIME DUTY CYCLE 2.0% +9.0 SCOPE
0.07 0.05 0.03 0.02 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 25°C IC/IB VBE(off)
TURN-OFF TIME
+7.0
DUTY CYCLE 2.0% CURVES FIGURES VARIED. INPUT LEVELS APPROXIMATELY SHOWN. NPN, REVERSE POLARITIES.
COLLECTOR CURRENT (AMPERES)
Figure Turn-On Time
Figure Switching Time Equivalent Test Circuits
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.05 0.02 0.01 SINGLE PULSE P(pk) qJC(t) r(t) 0.875°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) qJC(t) DUTY CYCLE, t1/t2
0.05
0.02 0.01 0.02
0.05
TIME (ms)
1000
2000
Figure Thermal Response
200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5883, 2N5885 2N5884, 2N5886 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based J(pk) 200°C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided J(pk) 200°C. J(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
COLLECTOR CURRENT (AMPERES)
Figure Active-Region Safe Operating Area
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2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
TIME 3000 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 25°C IC/IB 25°C 2000 CAPACITANCE (pF) 1000 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
COLLECTOR CURRENT (AMPERES)
REVERSE VOLTAGE (VOLTS)
Figure Turn-Off Time DEVICES 2N5883 2N5884
1000 CURRENT GAIN COLLECTOR CURRENT (AMPERES) 25°C 1000 CURRENT GAIN 25°C
Figure Capacitance DEVICES 2N5885 2N5886
150°C
150°C
COLLECTOR CURRENT (AMPERES)
Figure Current Gain
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C
COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C
0.01
0.02
0.05 BASE CURRENT (AMPERES)
0.01
0.02
0.05
COLLECTOR CURRENT (AMPERES)
Figure Collector Saturation Region
Figure Collector Saturation Region
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2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
25°C VOLTAGE (VOLTS) VOLTAGE (VOLTS) 25°C
VBE(sat) IC/IB VCE(sat) IC/IB
VBE(sat) IC/IB VCE(sat) IC/IB
COLLECTOR CURRENT (AMPERES)
COLLECTOR CURRENT (AMPERES)
Figure "On" Voltages
Figure "On" Voltages
ORDERING INFORMATION
Device 2N5883 2N5883G 2N5884 2N5884G 2N5885 2N5885G 2N5886 2N5886G Package TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) Units Tray TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) Shipping
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2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. RULES NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005)
INCHES 1.550 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 0.215 0.440 0.480 0.665 0.830 0.151 0.165 1.187 0.131 0.188
MILLIMETERS 39.37 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 5.46 11.18 12.19 16.89 21.08 3.84 4.19 30.15 3.33 4.77
0.13 (0.005)
STYLE BASE EMITTER CASE: COLLECTOR
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2N5883/D

2N5884 2N5886 Preferred Devices Complementary Silicon High-Power

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