FN4616.1 Radiation Hardened Octal Buffer/Line Driver, Three-State

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FN4616.1 Radiation Hardened Octal Buffer/Line Driver, Three-State

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HCS244T
FN4616.1
Radiation Hardened Octal Buffer/Line Driver, Three-State
Intersil`s Satellite Applications Flow (SAF) devices fully tested guaranteed 100kRAD total dose. These Class devices processed standard flow intended meet cost shorter lead-time needs large volume satellite manufacturers, while maintaining high level reliability. Intersil HCS244T Radiation Hardened NonInverting Octal Buffer/Line Driver, Three-State, with active-low output enables.
Features
Class MIL-PRF-38535 Radiation Performance Gamma Dose RAD(Si) Latch-Up Free Under Conditions Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/Bit-Day (Typ) Micron Radiation Hardened CMOS Fanout (Over Temperature Range) Driver Outputs LSTTL Loads Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels Input Current Levels VOL,
Specifications
Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications HCS244T contained 5962-95731. "hot-link" provided from website downloading. www.intersil.com/ Intersil`s Quality Management Plan Plan), listing Class screening operations, also available website. www.intersil.com/
Pinouts
HCS244DTR (SBDIP), CDIP2-T20 VIEW
Ordering Information
ORDERING INFORMATION 5962R9573101TRC 5962R9573101TXC PART NUMBER HCS244DTR HCS244KTR TEMP. RANGE (oC)
NOTE: Minimum order quantity units through
distribution, units direct.
HCS244KTR (FLATPACK), CDFP4-F20 VIEW
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Intersil (and design) trademark Intersil Americas Inc. Copyright Intersil Americas Inc. 2002. Rights Reserved Satellite Applications Flow(SAF) trademark Intersil Corporation.
HCS244T Functional Diagram
TRUTH TABLE INPUTS 1OE, High Voltage Level Voltage Level Immaterial High Impedance OUTPUT
HCS244T Characteristics
DIMENSIONS: (2747µm 2693µm 533µm ±51.0µm) 21mils ±2mil METALLIZATION: Type: Thickness: SUBSTRATE POTENTIAL: Unbiased Silicon Sapphire BACKSIDE FINISH: Sapphire PASSIVATION: Type: Silox (SiO2) Thickness: WORST CASE CURRENT DENSITY: 2.0e5 A/cm TRANSISTOR COUNT: PROCESS: CMOS
Metallization Mask Layout
HCS244T
(20) (19)
(18)
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Intersil U.S. products manufactured, assembled tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications viewed www.intersil.com/design/quality
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design, software and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 7585 Irvine Center Drive Suite Irvine, 92618 TEL: (949) 341-7000 FAX: (949) 341-7123 Intersil Corporation 2401 Palm Palm Bay, 32905 TEL: (321) 724-7000 FAX: (321) 724-7946 EUROPE Intersil Europe Sarl Ave. William Graisse, 1006 Lausanne Switzerland TEL: 6140560 FAX: 6140579 ASIA Intersil Corporation Unit 1804 18/F Guangdong Water Building Austin Road TST, Kowloon Hong Kong TEL: +852 2723 6339 FAX: +852 2730 1433

FN4616.1 Radiation Hardened Octal Buffer/Line Driver, Three-State

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