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HML1225/HXL1225 0.8A 300/380 VOLTAGE SCRS IGT


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Spec. HA200406 Issued Date 1992.11.25 Revised Date 2004.08.13 Page
HML1225/HXL1225
0.8A 300/380 VOLTAGE SCRS IGT<200uA
Description
HML1225/HXL1225 series silicon controlled rectifiers high performance planner diffused PNPN devices. These parts intended cost high volume applications.
Absolute Maximum Ratings (TA=25°C)
Parameter Repetitive Peak State Voltage On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature Part HXL1225 HML1225 Symbol VDRM VDRM IT(rms) IT(AV) VGRM PG(AV) Tstg Tsld Unit
TO-92 Test Conditions TJ=40°C 125°C (RGK=1K) TC=40°C Half Cycle=180°,TC=40°C IGR=10uA 10us 20ms
1.6mm from case
Classification
Rank HML1225 HXL1225 10-18 10-18 12-23 12-23 17-28 17-28 22-55 22-55 45-105 45-105 95-155
Electrical Characteristics (TA=25°C)
Parameter Off-State Leakage Current Off-State Leakage Current On-State Voltage On-State Threshold Voltage On-State Slops Resistance Gate Trigger Current Gate Trigger Voltage Holding Current Latching Current Critical Rate Voltage Rise Crtical Rate Current Rise Gate Controlled Delay Time Commutated Turn-off Time Thermal Resistance junc.to case Thermal Resistance junc.
HML1225, HXL1225
Symbol IDRM IDRM VT(TO) dv/dt di/dt
0.95
Unit V/us A/us
Test Conditions @VDRM (RGK=1K), TJ=125°C @VDRM (RGK=1K), TJ=25°C IT=0.4A, TJ=25°C IT=0.8A, TJ=25°C TJ=125°C TJ=125°C VD=7V VD=7V RGK=1K(ohm) RGK=1K(ohm) VD=0.67*VDRM(RGK=1K), TJ=125°C IG=10mA,diG/dt=0.1A/us, TJ=125°C IG=10mA,diG/dt=0.1A/us TC=85°C,VD=0.67*VDRM VR=35V,IT=IT(AV)
HSMC Product Specification
TO-92 Dimension
Spec. HA200406 Issued Date 1992.11.25 Revised Date 2004.08.13 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Product Series
(M,X)
Date Code
Control Code
Note: Green label used pb-free packing
Style: 1.Cathode 2.Gate 3.Anode Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HML1225, HXL1225 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HA200406 Issued Date 1992.11.25 Revised Date 2004.08.13 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HML1225, HXL1225
HSMC Product Specification

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