HTL195 EPITAXIAL PLANAR TRANSISTOR Description HTL195 d

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HTL195 EPITAXIAL PLANAR TRANSISTOR Description HTL195 d

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Spec. HE6452 Issued Date 1993.02.10 Revised Date 2005.02.15 Page
HTL195
EPITAXIAL PLANAR TRANSISTOR
Description
HTL195 designed high voltage power switching applications especially telephone telecommunication circuits. TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage -500 VCEO Collector Emitter Voltage -500 Collector Current -300
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 *hFE3 Min. -500 -500 Typ. Max. -200 -500 -900 Unit IC=-100uA, IE=0 IC=-1mA, IB=0 VCB=-500V, IE=0 VCE=-100V, IB=0 VEB=-6V, IC=0 IC=-20mA, IB=-2mA IC=-80mA, IB=-4mA IC=-20mA, IB=-2mA VCE=-10V, IC=-1mA VCE=-10V, IC=-20mA VCE=-10V, IC=-80mA VCE=-20V, IE=-10mA, f=1MHz VCB=-20V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
HTL195
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HE6452 Issued Date 1993.02.10 Revised Date 2005.02.15 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
VCE=10V
VCE(sat) IC=10IB
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=20IB 1000
Saturation Voltage Collector Current
Saturation Voltage (mV)
Saturation Voltage (mV)
1000
VBE(s IC=10IB
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Capacitance Reverse-Biased Voltage
1000 10000
Safe Operating Area
Capacitance (Pf)
Collector Current (mA)
1000
PT=1ms PT=100ms PT=1s
1000 10000
Reverse Biased Voltage
Forward Voltage
HTL195
HSMC Product Specification
TO-92 Dimension
Spec. HE6452 Issued Date 1993.02.10 Revised Date 2005.02.15 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Base 3.Collector Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HTL195 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6452 Issued Date 1993.02.10 Revised Date 2005.02.15 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HTL195
HSMC Product Specification

HTL195 EPITAXIAL PLANAR TRANSISTOR Description HTL195 d

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