HTL145 EPITAXIAL PLANAR TRANSISTOR Description HTL145 d

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HTL145 EPITAXIAL PLANAR TRANSISTOR Description HTL145 d

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Spec. HE6454 Issued Date 1993.02.24 Revised Date 2005.02.15 Page
HTL145
EPITAXIAL PLANAR TRANSISTOR
Description
HTL145 designed high voltage power switching applications especially telephone telecommunication circuits. TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage Collector Current
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 *hFE3 Min. Typ. Max. Unit IC=100uA IC=1mA VCB=500V VCE=200V VEB=6V IC=20mA, IB=2mA IC=100mA, IB=4mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE=10V, IC=20mA VCE=10V, IC=80mA VCE=20V, IE=10mA VCB=20V, f=1MHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
HTL145
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
10000
Spec. HE6454 Issued Date 1993.02.24 Revised Date 2005.02.15 Page
Saturation Voltage Collector Current
VCE=10V
Saturation Voltage (mV)
1000
VCE(sat) IC=10IB
VCE(sat) IC=4IB
1000
1000
Collector Current (mA)
Collector Current (mA)
Sturation Voltage Collector Current
10000
Capacitance Reverse-Biased Voltage
Saturation Voltage (mV)
Capacitance (Pf)
1000
VBE(sat) IC=10IB
1000
Collector Current (mA)
Reverse Biased Voltage
Safe Operating Area
1000 PT=100ms PT=1s PT=1ms
Collector Current (mA)
1000
Forward Voltage
HTL145
HSMC Product Specification
TO-92 Dimension
Spec. HE6454 Issued Date 1993.02.24 Revised Date 2005.02.15 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Base 3.Collector Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HTL145 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6454 Issued Date 1993.02.24 Revised Date 2005.02.15 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HTL145
HSMC Product Specification

HTL145 EPITAXIAL PLANAR TRANSISTOR Description HTL145 d

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