HTIP112 EPITAXIAL PLANAR TRANSISTOR Description HTIP112

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HTIP112 EPITAXIAL PLANAR TRANSISTOR Description HTIP112

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Spec. HE200203 Issued Date 2000.08.01 Revised Date 2004.11.19 Page
HTIP112
EPITAXIAL PLANAR TRANSISTOR
Description
HTIP112 designed general purpose amplifier low-speed switching applications.
TO-220
Darlington Schematic
Absolute Maximum Ratings (TA=25°C)
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum
Maximum Power Dissipation Total Power Dissipation (TC=25°C) Total Power Dissipation (TA=25°C) Maximum Voltages Currents BVCBO Collector Base Voltage. BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current (Continue) Collector Current (Peak).
Electrical Characteristics (TA=25°C)
Symbol BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Min. Typ. Max. Unit IC=1mA VCB=100V VCE=50V VEB=5V IC=2A, IB=8mA IC=2A, VCE=4V IC=1A, VCE=4V IC=2A, VCE=4V VCB=10V, f=0.1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
HTIP112
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
10000 10000
Spec. HE200203 Issued Date 2000.08.01 Revised Date 2004.11.19 Page
Current Gain Collector Current
1000
1000
VCE=4V
VCE=3V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=100IB 10000
Saturation Voltage Collector Current
VCE(sat) IC=250IB
Saturation Voltage (mV)
1000
Saturation Voltage (mV)
1000
1000
10000
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 10000
Voltage Collcetor Current
Saturation Voltage (mV)
1000
Voltage (mV)
1000
VBE(sat) IC=250IB
VBE(ON) VCE=4V
1000
10000
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
HTIP112
HSMC Product Specification
Spec. HE200203 Issued Date 2000.08.01 Revised Date 2004.11.19 Page
Voltage Collcetor Current
10000
Switching Time Collector Current
VCC=30V,IC=250IB1= -250IB2
1000
Switching Times (us).
Tstg
Voltage (mV)
VBE(ON) VCE=3V
1000 10000
Collector Current-IC (mA)
Collector Current-IC
Capcitance Reverse-Biased Voltage
Safe Operating Area
PT=1mS PT=1S
Collector Current-IC
Capacitance (pF)
PT=100mS
0.01
Reverse Biased Voltage
Forward Voltage
HTIP112
HSMC Product Specification
TO-220AB Dimension
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Spec. HE200203 Issued Date 2000.08.01 Revised Date 2004.11.19 Page
Date Code Control Code
Note: Green label used pb-free packing Style: 1.Base Tab.Collector 3.Emitter Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48
Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87
Typical, Unit:
3-Lead TO-220AB Plastic Package HSMC Package Code:
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTIP112
HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE200203 Issued Date 2000.08.01 Revised Date 2004.11.19 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HTIP112
HSMC Product Specification

HTIP112 EPITAXIAL PLANAR TRANSISTOR Description HTIP112

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