HSD882S Epitaxial Planar Transistor Description HSD882S

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HSD882S Epitaxial Planar Transistor Description HSD882S

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Spec. HE6544 Issued Date 1992.11.25 Revised Date 2006.07.28 Page
HSD882S
Epitaxial Planar Transistor
Description
HSD882S suited output stage 0.75W audio, voltage regulator, relay driver.
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature. +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage. VEBO Emitter Base Voltage Collector Current.
Electrical Characteristics =25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2
Min.
Typ.
Max.
Unit IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=200mA IC=2A, IB=200mA VCE=2V, IC=20mA VCE=2V, IC=1A
Test Conditions
VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification hFE2
Rank Range 160-320 250-500
HSD882S
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HE6544 Issued Date 1992.11.25 Revised Date 2006.07.28 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
VCE=2V 1000 10000
VCE(sat) IC=10IB
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000 1000
Saturation Voltage Collector Current
Saturation Voltage (mV)
Saturation Voltage (mV)
VCE(sat) IC=40IB 1000 10000
VCE(sat) IC=20IB
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000
Capacitance Reverse-Biased Voltage
Saturation Voltage (mV)
1000
Capacitance (pF)
VBE(sat) IC=10IB 1000 10000
Collector Current-IC (mA)
Reverse-Biased Voltage
HSD882S
HSMC Product Specification
Spec. HE6544 Issued Date 1992.11.25 Revised Date 2006.07.28 Page
Cutoff Frequency Collector Current
1000
Safe Operating Area
PT=1ms
Cutoff Frequency (MHz).
Collector Current (mA)
PT=100ms PT=1s
VCE=5V
1000
0.01
Collector Curren (mA)
Forward Biased Voltage
Power Derating
Power Dissipation-PD (mW)
Ambient Temperature-Ta(
HSD882S
HSMC Product Specification
TO-92 Dimension
Spec. HE6544 Issued Date 1992.11.25 Revised Date 2006.07.28 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD882S HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6544 Issued Date 1992.11.25 Revised Date 2006.07.28 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3oC/sec
Pb-Free Assembly <3oC/sec
100oC 150oC 60~120
150oC 200oC 60~180
<3oC/sec
<3oC/sec
183oC 60~150 +0/-5 10~30 <6oC/sec minutes
217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature 245oC ±5oC 260oC ±5oC
Dipping time 10sec ±1sec 10sec ±1sec
HSD882S
HSMC Product Specification

HSD882S Epitaxial Planar Transistor Description HSD882S

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