HSD879D SILICON EPITAXIAL TYPE TRANSISTOR Description 1

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HSD879D SILICON EPITAXIAL TYPE TRANSISTOR Description 1

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Spec. HD200203 Issued Date 1996.07.15 Revised Date 2005.08.18 Page
HSD879D
SILICON EPITAXIAL TYPE TRANSISTOR
Description
1.5V electronic flash use.
Features
Charger-up time about faster than germanium transistor. Small saturation voltage bring less power dissipation flashing times.
TO-126ML
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) BVCBO Collector Base Voltage. BVCEX Collector Emitter Voltage. BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current Collector Current (Pluse)
Electrical Characteristics (TA=25°C)
Symbol BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE *hFE Min. Typ. 0.83 Max. Unit IC=1mA IE=10uA VCB=20V VBE=4V IC=3A, IB=60mA VCE=-1V, IC=-2A VCE=2V, IC=3A VCE=10V, IC=50mA VCB=10V, f=1KHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Condition
HSD879D
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HD200203 Issued Date 1996.07.15 Revised Date 2005.08.18 Page
Saturation Voltage Collector Current
1000 VCE(sat) IC=50IB
Saturation Voltage (mV)
VCE=2V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Voltage Collector Current
10.0 1000
Cutoff Frequency Collector Current
VCE=10V
Cutoff Frequency
VBE(on) VCE=2V 1000 10000
Voltage
1000
Collector Current
Collector Current
Capacitance Reverse-Biased Voltage
Safe Operating Area
Collector Current-IC (mA)
Capacitance (pF)
PT=1ms
PT=100ms
PT=1S
Reverse Biased Voltage
Forward Voltage-VCE
HSD879D
HSMC Product Specification
TO-126ML Dimension
Spec. HD200203 Issued Date 1996.07.15 Revised Date 2005.08.18 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Date Code Control Code
Note: Green label used pb-free packing Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 7.74 10.87 0.88 1.28 3.50 2.61 1.18 2.88 0.68 3.44 1.88 0.50
Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 2.30 3.70 2.14 0.51
Typical, Unit:
3-Lead TO-126ML Plastic Package HSMC Package Code:
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD879D
HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HD200203 Issued Date 1996.07.15 Revised Date 2005.08.18 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HSD879D
HSMC Product Specification

HSD879D SILICON EPITAXIAL TYPE TRANSISTOR Description 1

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