HSD879 SILICON EPITAXIAL TYPE TRANSISTOR Description 1.

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HSD879 SILICON EPITAXIAL TYPE TRANSISTOR Description 1.

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Spec. HA200207 Issued Date 1996.07.15 Revised Date 2005.02.15 Page
HSD879
SILICON EPITAXIAL TYPE TRANSISTOR
Description
1.5V electronic flash use.
Features
Charger-up time about faster than germanium transistor Small saturation voltage bring less power dissipation flashing times
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) BVCBO Collector Base Voltage. BVCEX Collector Emitter Voltage. BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current Collector Current (Pluse).
Electrical Characteristics (TA=25°C)
Symbol BVCEO BVEBO BVCBO BVCEX ICBO IEBO *hFE *VCE(sat) Min. Typ. Max. Unit IC=1mA IE=10uA IC=10uA IC=1mA, VBE=3V VCB=20V VBE=4V VCE=2V, IC=3A IC=3A, IB=60mA VCE=10V, IC=50mA VCB=10V, f=1MHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Condition
HSD879
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HA200207 Issued Date 1996.07.15 Revised Date 2005.02.15 Page
Saturation Voltage Collector Current
1000 VCE(sat) IC=50IB
Saturation Voltage (mV)
VCE=2V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Cutoff Frequency Collector Current
1000
Capacitance Reverse-Biased Voltage
Cutoff Frequency (MHz).
VCE=10V
Capacitance (pF)
1000
Collector Current (mA)
Reverse Biased Voltage
Power Derating
Power Dissipation-PD (mW)
Ambient Temperature-Ta
HSD879
HSMC Product Specification
TO-92 Dimension
Spec. HA200207 Issued Date 1996.07.15 Revised Date 2005.02.15 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD879 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HA200207 Issued Date 1996.07.15 Revised Date 2005.02.15 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HSD879
HSMC Product Specification

HSD879 SILICON EPITAXIAL TYPE TRANSISTOR Description 1.

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