HSD471A EPITAXIAL PLANAR TRANSISTOR Description HSD471A

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HSD471A EPITAXIAL PLANAR TRANSISTOR Description HSD471A

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Spec. HE6518 Issued Date 1993.02.24 Revised Date 2004.07.21 Page
HSD471A
EPITAXIAL PLANAR TRANSISTOR
Description
HSD471A designed drive output stage frequency amplifier applications. TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *VBE(sat) *hFE Min. Typ. Max. Unit IC=100uA, IE=0 IC=10mA, IB=0 IE=100uA, IC=0 VCB=30V, IE=0 IC=1A, IB=100mA IC=1A, IB=100mA VCE=1V, IC=100mA VCE=6V, IC=10mA VCB=6V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
Classification
Rank Range 70-140 120-240 200-400
HSD471A
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000 VCE(s IC=10IB
Spec. HE6518 Issued Date 1993.02.24 Revised Date 2004.07.21 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
VCE=1V
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000
Capacitance Reverse-Biased Voltage
Saturation Voltage (mV)
Capacitance (pF)
VBE(sat) IC=10IB
1000
1000
Collector Current-IC (mA)
Reverse Biased Voltage
Cutoff Frequency
1000 10000 PT=1ms
Safe Operating Area
Cutoff Frequency (MHz).
Collector Current-IC (mA)
1000
PT=100ms PT=1s
VCE=6V
1000
Collector Current (mA)
Forward Biased Voltage-VCE
HSD471A
HSMC Product Specification
Spec. HE6518 Issued Date 1993.02.24 Revised Date 2004.07.21 Page
Reflow Profile
10+/-2
Temperature Profile Soldering
10+/-2
Temperature(
Temperature(
150+/-30 40+/-20
120+/-20
Time(sec)
Time(sec)
Power Temperature Derating
Power Dissipation (mW)
Case Temperature
HSD471A
HSMC Product Specification
TO-92 Dimension
Spec. HE6518 Issued Date 1993.02.24 Revised Date 2004.07.21 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD471A HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6518 Issued Date 1993.02.24 Revised Date 2004.07.21 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HSD471A
HSMC Product Specification

HSD471A EPITAXIAL PLANAR TRANSISTOR Description HSD471A

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