HSC1959 EPITAXIAL PLANAR TRANSISTOR Description HSC1959

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HSC1959 EPITAXIAL PLANAR TRANSISTOR Description HSC1959

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Spec. HE6524 Issued Date 1993.01.15 Revised Date 2005.02.14 Page
HSC1959
EPITAXIAL PLANAR TRANSISTOR
Description
HSC1959 designed audio frequency power amplifier applications.
Features
Excellent Linearity
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 Min. Typ. Max. 0.25 Unit IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=1V, IC=100mA VCE=6V, IC=400mA IC=20mA, VCE=6V IE=0, VCB=6V, f=1MHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
HSC1959
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HE6524 Issued Date 1993.01.15 Revised Date 2005.02.14 Page
Current Gain Collector Current
VCE=1V
VCE=6V
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000
VCE(sat) IC=10IB 1000
Voltage Collector Current
Saturation Voltage (mV)
Voltage (mV)
VBE(ON) VCE=1V
Collector Current-IC (mA) 1000
1000
Collector Current-IC (mA)
Cutoff Frequency
1000
Capacitance Reverse-Biased Voltage
Cutoff Frequency (MHz).
VCE=6V
Capacitance (pF)
1000
Collector Current (mA)
Reverse Biased Voltage
HSC1959
HSMC Product Specification
Spec. HE6524 Issued Date 1993.01.15 Revised Date 2005.02.14 Page
Safe Operating Area
10000 PT=1ms PT=100ms
Collector Current-IC (mA)
1000
PT=1s
Forward Voltage-VCE
HSC1959
HSMC Product Specification
TO-92 Dimension
Spec. HE6524 Issued Date 1993.01.15 Revised Date 2005.02.14 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSC1959 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6524 Issued Date 1993.01.15 Revised Date 2005.02.14 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HSC1959
HSMC Product Specification

HSC1959 EPITAXIAL PLANAR TRANSISTOR Description HSC1959

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