HSC1815 Epitaxial Planar Transistor Description HSC1815
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Spec. HE6523 Issued Date 1992.11.25 Revised Date 2006.07.28 Page
HSC1815
Epitaxial Planar Transistor
Description
HSC1815 designed driver stage amplifier general purpose amplification.
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature. +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage. VEBO Emitter Base Voltage Collector Current. Base Current.
Electrical Characteristics =25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2
Min.
Typ.
Max.
Unit IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0
Test Conditions
IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification hFE1
Rank Range GR(G) 200-400
HSC1815
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HE6523 Issued Date 1992.11.25 Revised Date 2006.07.28 Page
Saturation Voltage Collector Current
VBE(sat) IC=10IB VCE=6V
Saturation Voltage (mV)
VCE(sat) IC=10IB
0.01 1000
0.01 0.01 1000
Collector Current (mA)
Collector Current (mA)
Capacitance Reverse-Biased Voltage
1000
Cutoff Frequency Collector Current
Cutoff Frequency (MHz)
VCE=10V
Capacitance (pF)
Reverse-Biased Voltage
Collector Current (mA)
Safe Operating Area
10000 PT=1ms 1000
PD-Ta
Power Dissipation-PD(mW)
PT=100ms
Collector Current-IC (mA)
PT=1s
Forward Voltage-VCE
Ambient Temperature-Ta(
HSC1815
HSMC Product Specification
TO-92 Dimension
Spec. HE6523 Issued Date 1992.11.25 Revised Date 2006.07.28 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSC1815 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6523 Issued Date 1992.11.25 Revised Date 2006.07.28 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3oC/sec
Pb-Free Assembly <3oC/sec
100oC 150oC 60~120
150oC 200oC 60~180
<3oC/sec
<3oC/sec
183oC 60~150 +0/-5 10~30 <6oC/sec minutes
217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature 245oC ±5oC 260oC ±5oC
Dipping time 10sec ±1sec 10sec ±1sec
HSC1815
HSMC Product Specification
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