HSB772S EPITAXIAL PLANAR TRANSISTOR Description HSB772S

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HSB772S EPITAXIAL PLANAR TRANSISTOR Description HSB772S

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Spec. HE6549 Issued Date 1992.11.25 Revised Date 2004.08.13 Page
HSB772S
EPITAXIAL PLANAR TRANSISTOR
Description
HSB772S designed using output stage 0.75W amplifier, voltage regulator, DC-DC converter driver. TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature. +150 Junction Temperature. +150 Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C). Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage. VEBO Emitter Base Voltage Collector Current
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 Min. Typ. Max. -0.5 Unit Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification hFE2
Rank Range 100-200 160-320 200-400
HSB772S
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HE6549 Issued Date 1992.11.25 Revised Date 2004.08.13 Page
Saturation Voltage Collector Current
10000 VCE(s IC=5IB
Saturation Voltage (mV)
1000
VCE=2V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=10IB
Saturation Voltage Collector Current
10000 VCE(sat) IC=20IB
Saturation Voltage (mV)
Saturation Voltage (mV)
1000
1000
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=40IB 1000
Saturation Voltage Collector Current
10000 VBE(sat) IC=10IB
Saturation Voltage (mV)
Saturation Voltage (mV)
1000
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
HSB772S
HSMC Product Specification
Spec. HE6549 Issued Date 1992.11.25 Revised Date 2004.08.13 Page
Cutoff Frequency Collector Current
1000 1000
Capacitance Reverse-Biased Voltage
Cutoff Frequency (MHz).
VCE=5V
Capacitance (pF)
1000
Collector Current (mA)
Reverse-Biased Voltage
Safe Operation Area
PT=1ms
Power Derating
Collector Current
Power Dissipation-PD (mW)
PT=100ms
PT=1s
0.01
Forward Biased Voltage
Ambient Temperature-Ta
HSB772S
HSMC Product Specification
TO-92 Dimension
Spec. HE6549 Issued Date 1992.11.25 Revised Date 2004.08.13 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB772S HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6549 Issued Date 1992.11.25 Revised Date 2004.08.13 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HSB772S
HSMC Product Specification

HSB772S EPITAXIAL PLANAR TRANSISTOR Description HSB772S

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