HSB562 EPITAXIAL PLANAR TRANSISTOR Description HSB562 d

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HSB562 EPITAXIAL PLANAR TRANSISTOR Description HSB562 d

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Spec. HE6513 Issued Date 1993.01.15 Revised Date 2005.02.14 Page
HSB562
EPITAXIAL PLANAR TRANSISTOR
Description
HSB562 designed general purpose frequency power amplifier applications. TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE Min. Typ. Max. -500 Unit IC=-10uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-20V, IE=0 IC=-800mA, IB=-80mA IC=-500mA, VCE=-2V VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
Classification
Rank Range 85-170 120-240
HSB562
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HE6513 Issued Date 1993.01.15 Revised Date 2005.02.14 Page
Saturation Voltage Collector Current
VCE=2
Saturation Voltage (mV)
VCE(s IC=30IB
VCE(s IC=10IB 1000 1000 10000
Collector Current (mA)
Collector Current (mA)
Voltage Collector Current
10000 1000
Cutoff Frequency Collector Current
Cutoff Frequency (MHz)
Voltage (mV)
1000
VCE=2V
VBE(on) VCE=2V
1000 10000
1000
Collector Current (mA)
Collector Current (mA)
Capacitance Reverse-Biased Voltage
1000 10000
Safe Operating Area
Capacitance (pF)
Collector Current-IC (mA)
1000 PT=1ms PT=100ms PT=1s
Reverse Biased Voltage
Forward Voltage-VCE
HSB562
HSMC Product Specification
Spec. HE6513 Issued Date 1993.01.15 Revised Date 2005.02.14 Page
Power Derating
1000
Power Dissipation-PD(mW)
Ambient Temperature-Ta(
HSB562
HSMC Product Specification
TO-92 Dimension
Spec. HE6513 Issued Date 1993.01.15 Revised Date 2005.02.14 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB562 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6513 Issued Date 1993.01.15 Revised Date 2005.02.14 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HSB562
HSMC Product Specification

HSB562 EPITAXIAL PLANAR TRANSISTOR Description HSB562 d

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