HSB1109S EPITAXIAL PLANAR TRANSISTOR Description HSB110

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HSB1109S EPITAXIAL PLANAR TRANSISTOR Description HSB110

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Spec. HE6514 Issued Date 1993.03.15 Revised Date 2005.02.14 Page
HSB1109S
EPITAXIAL PLANAR TRANSISTOR
Description
HSB1109S designed frequency high voltage amplifier applications complementary pair with HSD1609S. TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage -160 VCEO Collector Emitter Voltage -160 VEBO Emitter Base Voltage Collector Current -100
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE1 *hFE2 Min. -160 -160 Typ. Max. -1.5 Unit IC=-10uA, IE=0 IC=-1mA. IB=0 IE=-10uA, IC=0 VCB=-140V, IE=0 IC=-30mA, IB=-3mA VCE=-5V, IC=-10mA VCE=-5V, IC=-10mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
Classification hFE1
Rank Range 60-120 100-200 160-320
HSB1109S
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HE6514 Issued Date 1993.03.15 Revised Date 2005.02.14 Page
Saturation Voltage Collector Current
1000
Saturation Voltage (mV)
VCE=5V
VCE(sat) IC=10IB
Collector Current-IC (mA)
Collector Current-IC (mA)
Voltage Collector Current
1000
Output Capacitance Reverse-Blased Voltage
Output Capacttance-Cob (pF)
Voltage (mV)
VBE(ON) VCE=5V
1000
Collector Current-IC (mA)
Reverse-Biased-VCB
Cutoff Frequency Collector Current
1000 1000
Safe Operating Area
Cutoff Frequency (MHz)
Collector Current (mA)
1000
1000
Collector Current-IC (mA)
Forward Biased Voltage
HSB1109S
HSMC Product Specification
Spec. HE6514 Issued Date 1993.03.15 Revised Date 2005.02.14 Page
Power Derating
1000
Power Dissipation-PD (mW)
Ambient Temperature-Ta
HSB1109S
HSMC Product Specification
TO-92 Dimension
Spec. HE6514 Issued Date 1993.03.15 Revised Date 2005.02.14 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB1109S HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6514 Issued Date 1993.03.15 Revised Date 2005.02.14 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HSB1109S
HSMC Product Specification

HSB1109S EPITAXIAL PLANAR TRANSISTOR Description HSB110

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